Work

Automatic TCAD calibration based on Bayesian optimization for SiC MOSFET

Year: 2026

Type: article

Source: Science China Information Sciences

DOI: 10.1007/s11432-025-4974-4

Authors: Mengyao Zhao, Yanji He, Zhenya Wang, Yong Gu, Tianchun Nie, Yu Huang, Runhua Huang, Song Bai, Haining Shi, Wei Wang, Jiaxing Wei, Sheng Li, Yongjia Li, Jie Ma, Siyang Liu, Long Zhang, Weifeng Sun

Institutions: Southeast University, The Hong Kong University of Science and Technology (Guangzhou), Suzhou Research Institute, Hong Kong University of Science and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7224914834

FWCI:

Cites: 3

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Related to: 10