Stable and Non-Toxic Sn-Ge Based Perovskite Solar Cells: A Numerical Simulation Study
Year: 2025
Type: conference-paper
Abstract: Perovskite solar cells (PSCs) continue to attract significant attention due to their high efficiency and cost-effective fabrication, though stability and environmental concerns remain critical issues. To address the toxicity of lead-based absorbers, this study investigates tin-germanium (Sn-Ge) based perovskites as eco-friendly alternatives. Numerical simulations using SCAPS-1D were conducted on$\mathbf{C s S n}_{\mathbf{0. 5}} \mathbf{G e}_{\mathbf{0. 5}} \mathbf{I}_{\mathbf{3}}$,$\mathbf{F A S n}_{\mathbf{0. 5}} \mathbf{G e}_{\mathbf{0. 5}} \mathbf{I}_{\mathbf{3}}$, and$\mathbf{M A S n}_{\mathbf{0. 5}} \mathbf{G e}_{\mathbf{0. 5}} \mathbf{I}_{\mathbf{3}}$under standard AM 1.5G illumination with a device architecture comprising AI-FTO-ZnO-perovskite-CuI-Ni layers. The influence of absorber thickness, acceptor density, defect concentration, bandgap tuning, and operating conditions on photovoltaic performance was analyzed. Additional analyses were performed for FTO donor density, series-shunt resistance variation, and changes in metallic contact properties to evaluate their influence on overall performance. The simulations indicate that$\mathbf{F A S n}_{\mathbf{0. 5}} \mathbf{G e}_{\mathbf{0. 5}} \mathbf{I}_{\mathbf{3}}$delivers the topmost power conversion efficiency (PCE) of 31.17%, with a short-circuit current density (Jsc) of$\mathbf{2 7. 9 5 ~ m A} / \mathbf{c m}^{\mathbf{2}}$, open-circuit voltage (Voc) of 1.24 V, and fill factor (FF) of 89.80%. CsSn${}_{\mathbf{0. 5}} \mathbf{G e}_{\mathbf{0. 5}} \mathbf{I}_{\mathbf{3}}$follows closely, achieving a PCE of 31.10% with$\mathbf{V}_{\mathbf{O C}}=\mathbf{1. 3 1 ~ V}, \mathbf{J}_{\mathbf{S C}}=\mathbf{2 6. 3 5} \mathbf{~ m A} / \mathbf{c m}^{\mathbf{2}}$, and$\mathbf{F F}=\mathbf{9 0. 3 2 \%}$.$\mathbf{M A S n}_{\mathbf{0. 5}} \mathbf{G e}_{\mathbf{0. 5}} \mathbf{I}_{\mathbf{3}}$shows slightly lower performance with a PCE of 28.40%,$\mathbf{V}_{\mathbf{O C}}=\mathbf{1. 2 3} \mathbf{~ V}, \mathbf{J}_{\mathbf{S C}}=\mathbf{2 6. 3 9} \mathbf{~ m A} / \mathbf{c m}^{\mathbf{2}}$, and$\mathbf{F F}=\mathbf{8 7. 6 9 \%}$. The maximum power point analysis also indicates strong device performance, with Cs-and FA-based structures delivering powers of 31.10 mW/cm${}^{\mathbf{2}}$and 31.17 mW/cm${}^{\mathbf{2}}$, respectively. Overall, these results demonstrate the potential of Sn-Ge perovskites, particularly Cs-, FA-and MA-based compositions, as promising candidates for high-efficiency, lead-free PSCs.
Institution: Southeast University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W7224944601