Double-Pulse Characterization of Monolithic Bidirectional GaN Switches in a T-Type Leg
Year: 2026
Type: conference-paper
Abstract: Wide-bandgap (WBG) semiconductor technologies, particularly GaN devices, enable higher switching frequencies and power densities and are therefore key enablers for high-efficiency power converters. This work compares monolithic bidirectional GaN switches (MBDS) with discrete back-to-back GaN implementations in a T-type topology under closely matched electrical and layout conditions. Double-pulse-test (DPT) characterization is used to analyze switching behavior, energy losses, and parasitic effects, with emphasis on the trade-off between reduced on-resistance and increased capacitive losses in monolithic structures. A compact three-shunt measurement concept with ground-referenced sensing is introduced to enable high-bandwidth, device-resolved switching-energy extraction at low static and dynamic common-mode voltage. The comparison is further extended by area-normalized figures of merit to jointly assess conduction behavior, capacitive switching behavior, and required chip area. The results show that MBDS reduces area-specific on-state resistance while increasing capacitive switching energy, quantifying the design trade-offs relevant for compact, high-frequency GaN converter systems.
Authors: Ole Bauer, Stefan Mönch
Institution: University of Stuttgart
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W7224958602