Work

Epitaxial growth of Si-doped β-(In x Ga1− x )2O3 thin films grown on (010) β-Ga2O3 substrates via mist chemical vapor deposition

Year: 2026

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0349357

Authors: Aoi Saito, Giacomo Biasin, Shoma Hosaka, Hiroki Miyake, Matteo Meneghini, Hiroyuki Nishinaka

Institutions: Kyoto Institute of Technology, University of Padua, Mirise Technologies Corporation (Japan)

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: Fusion Oriented REsearch for disruptive Science and Technology

OpenAlex ID: W7225073796

FWCI:

Cites: 49

Cited by:

Related to: 10