Work

Interface engineering in AlGaN-based deep-UV light-emitting diodes with Ni/Ga₂O₃ top layer

Year: 2026

Type: article

Source: Optics Letters

DOI: 10.1364/ol.618607

Authors: Yafei Huang, Gaofeng Deng, Mingyue Lou, Hongyu Liu, yaju wei, Kangkai Tian, Zihui Zhang, Li Chen, Wenrui Zhang, Wei Guo, Jichun Ye

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7225313893

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