Advanced Embedding Technologies for High Performance SiC Power Modules in Automotive Applications
Year: 2026
Type: article
Abstract: The ongoing transition towards electrified powertrains places increasing demands on power module performance, reliability, and scalability. Automotive traction inverter applications based on silicon carbide (SiC) MOSFETs require advanced packaging solutions capable of supporting high power density, low parasitic inductance, and efficient thermal management. Conventional module concepts are increasingly challenged by the fast switching behavior of SiC devices and the resulting electrical and electromagnetic constraints. Embedding technologies provide a promising approach to address these challenges by integrating bare power semiconductor dies directly into multilayer substrate architectures. This work presents an advanced embedding concept for high performance automotive power modules utilizing SiC MOSFETs. Bare dies are attached to thermally conductive substrates by silver sintering, followed by multilayer vacuum lamination using epoxy prepreg materials. Electrical interconnects are realized through laser drilled micro vias and electrolytic copper plating, enabling compact current paths, thick copper routing, and efficient heat spreading. The presented approach significantly reduces parasitic elements, particularly stray inductance, thereby supporting the exploitation of fast SiC switching characteristics while mitigating voltage overshoot and electromagnetic interference. Key aspects of the technology, including semiconductor requirements, thermal and electrical design considerations, and material selection, are discussed. Practical power module implementations demonstrate the suitability of the embedding concept for scalable, high performance automotive applications.
Source: IMAPSource Proceedings
DOI: 10.4071/001c.173028
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W7225340992
