Rotation-angle-dependent stability and H-passivation-tuned electronic properties of monolayer MoS2/4H-SiC (0001)
Year: 2026
Type: article
Source: Applied Surface Science
Institutions: Xi'an Polytechnic University, Xidian University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7225628009
