Year: 2004
Type: conference-paper
Abstract: Shunts below fired contacts of a fritted Ag paste were investigated using lock-in thermography and IVmeasurements.Experiments were carried out on single point contacts to p-type silicon and on solar cells with process induced and intentionally introduced shunts.All shunts below contacts exhibited a combination of ohmic and rectifying behavior.The IV characteristics of the point contacts were excellently modeled using an equivalent circuit comprising a diode, a low parallel shunt resistance and a limiting spreading resistance due to the small contact size.For shunted solar cells the double diode model is extended by adding this shunt equivalent circuit.As a main cause for cell degradation upon over-firing an increase in contact resistance was identified, while no severe shunts below contacts were observed.A model to explain the occurrence of a rectifying and an ohmic contact of Ag to lowly doped silicon is proposed.
Source: KOPS (University of Konstanz)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W761086403