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Optimum doping achieves high quantum yields in GaAs photoemitters

Year: 1971

Type: article

Abstract: Experimental data indicate that optimum doping exists. Measured quantum yield curves indicate optimum overall response is obtained in GaAs emitters with doping in high 10 to the 18th power per cu cm range. Doping for optimum response is not necessarily in this range.

Source: NASA STI Repository (National Aeronautics and Space Administration)

Author: H. Sonnenberg

Language: English

Topic: Photocathodes and Microchannel Plates

Subfield: Instrumentation

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W769201626

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Related to: 10