Work

High-endurance megahertz electrical self-oscillation in Ti/NbOx bilayer structures

Year: 2015
Type: article
Abstract: Electrical self-oscillation is reported for a Ti/NbOx negative differential resistance device incorporated in a simple electric circuit configuration. Measurements confirm stable operation of the oscillator at source voltages as low as 1.06 V, and demonstrate frequency control in the range from 2.5 to 20.5 MHz for voltage changes as small as ∼1 V. Device operation is reported for >6.5 × 1010 cycles, during which the operating frequency and peak-to-peak device current decreased by ∼25%. The low operating voltage, large frequency range, and high endurance of these devices makes them particularly interesting for applications such as neuromorphic computing.
Language: English
Open Access status: bronze
OpenAlex ID: W806017553
FWCI: 2.696
Cites: 26
Cited by: 60
Related to: 10