Work

Improved Si/SiOx interface passivation by ultra-thin tunneling oxide layers prepared by rapid thermal oxidation

Year: 2015

Type: article

Source: Applied Surface Science

DOI: 10.1016/j.apsusc.2015.07.060

Authors: Karim M. Gad, Daniel Vössing, Patrice Balamou, Daniel Hiller, Bert Stegemann, Heike Angermann, Martin Kasemann

Institutions: University of Freiburg, HTW Berlin - University of Applied Sciences, Helmholtz-Zentrum Berlin für Materialien und Energie

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W875565159

FWCI: 1.553

Cites: 62

Cited by: 20

Related to: 10