Work

Mechanism of GaAs transport by water reaction application to the growth of thick epitaxial layers

Year: 1999

Type: article

Source: Journal of Materials Science Materials in Electronics

DOI: 10.1023/a:1008957709493

Authors: M. Hammadi, J. C. Bourgoin, H. Samic

Institutions: Centre National de la Recherche Scientifique, Université Pierre-et-Marie-Curie, University of Sarajevo

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W88635111

FWCI: 1.433

Cites: 15

Cited by: 23

Related to: 10