Fabrication and properties of the Y-doped Al2O3 high-k gate dielectric films
Year: 2005
Type: article
Abstract: Y-doped Al2O3 dielectric films have been fabricated by reactive radio frequency co-sputtering method. Grazing angle incidence x-ray diffraction results show that the as-deposited and annealed films are amorphous. High resolution scanning electron microscope and atomic force microscope have been applied to observe the cross-section and the surface morphology of the thin films. The electric C-V and I-V characteristics were measured at high and variable frequency, respectively. It was found that the dielectric constant k of the films increases remarkably (from 8.14 to 11.8) with increasing Y-doping concentration. The Y—O bond is stronger than Al—O due to the obvious difference in electro-negativity between the two bond members, which enhanced the ionic polarization in the thin films leading to an increase of the dielectric constant. It was supposed that the presence of Y ions changed the structure and atomic coordination of Al2O3. The films were very smooth which meet the requirements of the device.
Source: Acta Physica Sinica
DOI: 10.7498/aps.54.5901
Authors: Guo De-Feng, Geng Wei-Gang, Lan Wei, Huang Chun-Ming, Wang Yin-Yue, (1)兰州大学物理系，兰州 730000; (2)兰州大学物理系，兰州 730000;燕山大学物理系，秦皇岛 066004
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W904584440