Growth rates of dry thermal oxidation of 4H-silicon carbide
Work
Year: 2016
Type: article
Source: Journal of Applied Physics
Cites: 29
Cited by: 35
Related to: 10
FWCI: 1.571
Citation percentile (by year/subfield): 81.12
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Grant ID HPTCAD