Author

Tarun Samadder

Observed name: Samadder, Tarun

Institutions: Micron (United States), Micron (Singapore)

Observed institutions: Micron (United States), Indian Institute of Technology Bombay, Micron (Singapore)

ORCID: 0000-0001-7137-1771

Observed ORCID: 0000-0001-7137-1771

OpenAlex ID: A5000783453

A Generic Trap Generation Framework for MOSFET Reliability—Part I: Gate Only Stress–BTI, SILC, and TDDB

2023 · Souvik Mahapatra, Aseer Ansari, et al. · IEEE Transactions on Electron Devices · 41

A Physical Model for Bulk Gate Insulator Trap Generation During Bias-Temperature Stress in Differently Processed p-Channel FETs

2021 · Tarun Samadder, Nilotpal Choudhury, et al. · IEEE Transactions on Electron Devices · 23

Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs

2021 · Nilotpal Choudhury, Tarun Samadder, et al. · IEEE International Reliability Physics Symposium proceedings · 10

Tunneling Leakage Current Dependent RDD Model Framework for Gate Oxide TDDB

2023 · Tarun Samadder, Souvik Mahapatra · International Conference on Simulation of Semiconductor Processes and Devices · 9

BTI Analysis Tool (BAT) Model Framework—Generation of Bulk Traps

2021 · Souvik Mahapatra, Narendra Parihar, et al. · Springer eBooks · 4

Modeling of HKMG Stack Process Impact on Gate Leakage, SILC and PBTI

2021 · Dimple Kochar, Tarun Samadder, et al. · IEEE International Reliability Physics Symposium proceedings · 4

BAT Framework Modeling of RMG HKMG Si and SiGe Channel FinFETs

2021 · Narendra Parihar, Nilotpal Choudhury, et al. · Springer eBooks · 3

BAT Framework Modeling of Dimension Scaling in FinFETs and GAA-SNS FETs

2021 · Souvik Mahapatra, Narendra Parihar, et al. · Springer eBooks · 3

Stochastic and Deterministic Modeling Frameworks for Time Kinetics of Gate Insulator Traps During and After Hot Carrier Stress in MOSFETs

2021 · Satyam Kumar, Tarun Samadder, et al. · IEEE International Reliability Physics Symposium proceedings · 3

A Theoretical Framework for Trap Generation and Passivation in NAND Flash Tunnel Oxide During Distributed Cycling and Retention Bake

2021 · Tarun Samadder, Satyam Kumar, et al. · IEEE International Reliability Physics Symposium proceedings · 3

Comprehensive physics-based modeling of post-cycling long-term data retention in 176L 3-D NAND Flash Memories

2024 · Karansingh Thakor, Nikhil Rangarajan, et al. · IEEE International Memory Workshop (IMW) · 2

BAT Framework Modeling of RMG HKMG GAA-SNS FETs

2021 · Nilotpal Choudhury, Tarun Samadder, et al. · Springer eBooks · 2

BAT Framework Modeling of Gate First HKMG Si and SiGe Channel FDSOI MOSFETs

2021 · Narendra Parihar, Tarun Samadder, et al. · Springer eBooks · 1

BAT Framework Modeling of Gate First HKMG Si Channel MOSFETs

2021 · Souvik Mahapatra, Narendra Parihar, et al. · Springer eBooks · 1

TCAD Incorporation of Physical Framework to Model N and P BTI in MOSFETs

2020 · Ravi Tiwari, Nilotpal Choudhury, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 1

A Physics-Based Modeling Framework for Long-Term Retention Loss in 3D Nand Arrays

2026 · Anuj Kumar, Tarun Samadder, et al. · IEEE International Reliability Physics Symposium proceedings

BAT Framework Modeling of Gate First HKMG Si-Capped SiGe Channel MOSFETs

2021 · Narendra Parihar, Tarun Samadder, et al. · Springer eBooks

BAT Framework Modeling of AC NBTI: Stress Mode, Duty Cycle and Frequency

2021 · Souvik Mahapatra, Narendra Parihar, et al. · Springer eBooks

BAT Framework Modeling of RMG HKMG SOI FinFETs

2021 · Narendra Parihar, Nilotpal Choudhury, et al. · Springer eBooks

Works count: 23

Citation count: 110

H-index: 4

I10-index: 3