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Takumi Mikawa

Observed name: T. Mikawa
ORCID: 0009-0008-7352-4282
Observed ORCID: 0009-0008-7352-4282
OpenAlex ID: A5000824687
Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism
2008 · Z. Wei, Y. Kanzawa, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 359
An 8 Mb Multi-Layered Cross-Point ReRAM Macro With 443 MB/s Write Throughput
2012 · Akifumi Kawahara, Ryotaro Azuma, et al. · IEEE Journal of Solid-State Circuits · 316
A 4M Synapses integrated Analog ReRAM based 66.5 TOPS/W Neural-Network Processor with Cell Current Controlled Writing and Flexible Network Architecture
2018 · Reiji Mochida, Kazuyuki Kouno, et al. · Symposium on VLSI Technology · 206
An 8Mb multi-layered cross-point ReRAM macro with 443MB/s write throughput
2012 · Akifumi Kawahara, Ryotaro Azuma, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 145
Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model
2011 · Z. Wei, T. Takagi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 130
Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application
2015 · Y. Hayakawa, A. Himeno, et al. · Symposium on VLSI Technology · 95
Electroforming and resistance-switching mechanism in a magnetite thin film
2007 · A. Odagawa, Y. Katoh, et al. · Applied Physics Letters · 85
Filament scaling forming technique and level-verify-write scheme with endurance over 107 cycles in ReRAM
2013 · A. Kawahara, K. Kawai, et al. · Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference · 52
Ferroelectric Nonvolatile Memory Technology and Its Applications
1996 · Tatsumi Sumi, Yuji Judai, et al. · Japanese Journal of Applied Physics · 46
ReRAM Technologies for Embedded Memory and Further Applications
2018 · Satoru Ito, Yukio Hayakawa, et al. · IEEE International Memory Workshop (IMW) · 41
Retention Model for High-Density ReRAM
2012 · Z. Wei, T. Takagi, et al. · IEEE International Memory Workshop (IMW) · 39
Fast switching and long retention Fe-O ReRAM and its switching mechanism
2007 · S. Muraoka, K. Osano, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 39
Highly reliable TaOx ReRAM with centralized filament for 28-nm embedded application
2015 · Y. Hayakawa, A. Himeno, et al. · Symposium on VLSI Circuits · 31
Conductive filament scaling of TaOx bipolar ReRAM for long retention with low current operation
2012 · T. Ninomiya, T. Takagi, et al. · Symposium on VLSI Technology · 29
Distribution projecting the reliability for 40 nm ReRAM and beyond based on stochastic differential equation
2015 · Z. Wei, K. Eriguchi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 28
Neuromorphic computing based on Analog ReRAM as low power solution for edge application
2019 · Takumi Mikawa, Ryutaro Yasuhara, et al. · IEEE International Memory Workshop (IMW) · 23
Conductive Filament Expansion in TaOxBipolar Resistive Random Access Memory during Pulse Cycling
2013 · Takeki Ninomiya, Koji Katayama, et al. · Japanese Journal of Applied Physics · 22
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Quantitative method for estimating characteristics of conductive filament in ReRAM
2014 · Zhiqiang Wei, Ryutaro Yasuhara, et al. · IEEE International Symposium on Circuits and Systems proceedings · 10
Embedded Ferroelectric Memory Technology With Completely Encapsulated Hydrogen Barrier Structure
2005 · Y. Nagano, T. Mikawa, et al. · IEEE Transactions on Semiconductor Manufacturing · 10
Highly-reliable ferroelectric memory technology with bismuth-layer structured thin films (Y-1 family)
2002 · E. Fujii, T. Otsuki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 10
Newly developed process integration technologies for highly reliable 40 nm ReRAM
2019 · Shinichi Yoneda, Satoru Ito, et al. · Japanese Journal of Applied Physics · 9
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Reduction of cycle-to-cycle variability in ReRAM by filamentary refresh
2017 · K. Ohmori, A. Shinoda, et al. · Symposium on VLSI Technology · 9
A new prediction method for ReRAM data retention statistics based on 3D filament structures
2015 · Z. Wei, K. Katayama, et al. · IEEE International Reliability Physics Symposium proceedings · 9
Low-thermal-budget crystallization of ferroelectric Al:HfO2 films by millisecond flash lamp annealing
2024 · Hideaki Tanimura, Yuma Ueno, et al. · Japanese Journal of Applied Physics · 8
Reliability Issues in Analog ReRAM Based Neural-Network Processor
2019 · Ryutaro Yasuhara, Takashi Ono, et al. · IEEE International Reliability Physics Symposium proceedings · 6
Works count: 39
Citation count: 1,780
H-index: 17
I10-index: 20
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