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Yoshitaka Nagasato

ORCID: 0000-0001-9179-1116
Observed ORCID: 0000-0001-9179-1116
OpenAlex ID: A5001498496
Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress
2022 · Tetsuo Narita, Masakazu Kanechika, et al. · Scientific Reports · 47
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Analysis of intrinsic reverse leakage current resulting from band-to-band tunneling in dislocation-free GaN p–n junctions
2021 · Tomoyuki Shoji, Tetsuo Narita, et al. · Applied Physics Express · 21
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Increase of reverse leakage current at homoepitaxial GaN p-n junctions induced by continuous forward current stress
2021 · Tetsuo Narita, Yoshitaka Nagasato, et al. · Applied Physics Letters · 21
Low-Temperature Fabrication of Ultrathin ZrO2/Si Structure Using Metal Deposition Followed by Oxygen Annealing
2005 · Yoshitaka Nagasato, Tsutomu Aya, et al. · Japanese Journal of Applied Physics · 20
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Enhanced field-effect mobility (>250 cm2/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD
2024 · Kazuki Ikeyama, Hidemoto Tomita, et al. · Applied Physics Express · 15
Electrical Properties of Germanium Oxynitride and Its Interface with Germanium Prepared by Electron-Cyclotron-Resonance Plasma Oxidation and Nitridation
2006 · Yukio Fukuda, Koji Kato, et al. · Japanese Journal of Applied Physics · 10
Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions
2023 · Tetsuo Narita, Masakazu Kanechika, et al. · Applied Physics Letters · 7
Novel Fabrication Process for HfO2 Thin Film for Gate Dielectric
2005 · Yoshitaka Nagasato, Tomo Ueno · Japanese Journal of Applied Physics · 6
Demonstration of recycling process for GaN substrates using laser slicing technique towards cost reduction of GaN vertical power MOSFETs
2024 · Takashi Ishida, Takashi Ushijima, et al. · Applied Physics Express · 4
Reliability issues of gate oxides and $p-n$ junctions for vertical GaN metal–oxide–semiconductor field-effect transistors (Invited)
2023 · Tetsuo Narita, Daigo Kikuta, et al. · IEEE International Reliability Physics Symposium proceedings · 4
Thermal Stability of HfO2 Films Fabricated by Metal Organic Chemical Vapor Deposition
2008 · Yoshitaka Nagasato, Yoshitaka Iwazaki, et al. · Japanese Journal of Applied Physics · 2
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Suppression of n-type inversion in high-dose Mg-implanted GaN layers via cap annealing under ultra-high-pressure
2026 · Meguru Endo, Kenta Watanabe, et al. · Applied Physics Letters
1.7-kV GaN PiN Diodes Achieved by Mg/N Co-Implanted, Multi-Zone JTE Activated at Ultra-High Pressure
2026 · Kazuki Ikeyama, Satoshi Ikeda, et al. · IEEE Electron Device Letters
Characterization of Shockley-Read-Hall recombination centers created by proton irradiation into GaN p+/n- and p-/n+ junctions
2024 · Tetsuo Narita, Masakazu Kanechika, et al. · Gallium Nitride Materials and Devices
GaN MOSFET characteristics of the controlled interface for vertical power devices
2021 · Hidemoto Tomita, Sayaka Harada, et al. · The Japan Society of Applied Physics
Investigation of activation anneal for selective p-GaN layer.
2020 · K. Watanabe, Hiroko Iguchi, et al. · The Japan Society of Applied Physics
Evaluation of Interface State Distributions in LP-CVD SiO 2 /GaN by Deep-Level
2017 · Hiroyuki Ueda, Tomohiko Mori, et al. · The Japan Society of Applied Physics
The Approach for Direct Stacking of High-k Dielectrics on Si
2007 · Yoshitaka Nagasato, Yoshitaka Iwazaki, et al. · ECS Transactions
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The Approach for Direct Stacking of High-k Dielectrics on Si
2007 · Yoshitaka Nagasato, Yoshitaka Iwazaki, et al. · ECS Meeting Abstracts
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Fabrication of HfO_2/Si structure and its characterizaton using HR-RBS
2005 · Tomo Ueno, Yoshitaka Nagasato, et al. · Technical report of IEICE. SDM
Works count: 20
Citation count: 157
H-index: 7
I10-index: 6
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