Get started
Author

Hideaki Tanimura

Observed names: H. Tanimura, 谷村 英昭
Observed institutions: Kanazawa University, University of Hyogo, SCREEN (Japan), Screen, SCREEN Semiconductor Solutions Co., Ltd. (Japan), Hyogo University
ORCID: 0009-0005-2891-9101
Observed ORCID: 0009-0005-2891-9101
OpenAlex ID: A5001873031
Low Thermal Budget Ohmic Contact Formation by Laser Anneal
2016 · Fulvio Mazzamuto, Sebastien Halty, et al. · Materials science forum · 14
Fabrication of thin ferroelectric Hf0.5Zr0.5O2 films by millisecond flash lamp annealing
2023 · Hideaki Tanimura, Yuto Ota, et al. · Japanese Journal of Applied Physics · 12
10 nm-deep n+/p and p+/n Ge junctions with high activation formed by ion implantation and Flash Lamp Annealing (FLA)
2016 · H. Tanimura, H. Kawarazaki, et al. · International Workshop on Junction Technology · 10
Germanium Junctions for Beyond-Si Node Using Flash Lamp Annealing (FLA)
2017 · H. Tanimura, H. Kawarazaki, et al. · MRS Advances · 9
Low-thermal-budget crystallization of ferroelectric Al:HfO2 films by millisecond flash lamp annealing
2024 · Hideaki Tanimura, Yuma Ueno, et al. · Japanese Journal of Applied Physics · 8
Conformal SDE doping for FinFETs using an arsenic-doped Sol-Gel Coating (SGC) and Flash Lamp Annealing (FLA)
2017 · Kazuhiko Fuse, Hideaki Tanimura, et al. · International Workshop on Junction Technology · 7
Nanometer-deep junctions with high doping concentration for Ge SDEs using solid source doping and flash lamp annealing
2017 · Hideaki Tanimura, Kazuhiko Fuse, et al. · International Workshop on Junction Technology · 6
High re-activation and precise diffusion control of epitaxial Si:P layers using flash lamp annealing
2025 · Yuma Ueno, Hideaki Tanimura, et al. · MRS Advances · 5
PDF
Ultra-rapid cooling in the millisecond timescale for the enhancement of polarization properties in Al:HfO2 thin films using flash lamp annealing
2024 · Hideaki Tanimura, Tomoya Mifune, et al. · Japanese Journal of Applied Physics · 5
PDF
Platinum film patterning by laser lift-off using hydrocarbon film on insulating substrates
2004 · A. Morimoto, H. Tanimura, et al. · Applied Physics A · 5
Engineering ferroelectric interfaces: Delta-doping and millisecond flash lamp annealing for enhancing polarization properties in TiN/Al:HfO2/TiN capacitors
2025 · Hideaki Tanimura, Tomoya Mifune, et al. · Applied Physics Letters · 3
High activation reaching supersaturation achieved by short-duration flash lamp annealing
2018 · Hideaki Tanimura, Kenji Inoue, et al. · International Workshop on Junction Technology · 3
Formation of n+/p junctions less than 20 nm deep in Ge and diffusion control by Flash Lamp Annealing (FLA)
2015 · H. Kawarazaki, H. Tanimura, et al. · International Workshop on Junction Technology · 3
Improvement in the polarization properties in thin ferroelectric Hf0.5Zr0.5O2 films by two-step flash lamp annealing
2024 · Hideaki Tanimura, Yuto Ota, et al. · Japanese Journal of Applied Physics · 2
Low Specific Contact Resistivity Measurements using a New Test Structure and its Reduction to 10−9 ohm-cm2 in p-type SiGe/Metal Contacts using Flash Lamp Annealing
2019 · Hideaki Tanimura, Hikaru Kawarazaki, et al. · International Workshop on Junction Technology · 2
Precise Diffusion Control in the Nanometer Range in n+/p and p+/n Ge Using Ion Implantation and Flash Lamp Annealing
2018 · Hideaki Tanimura, Hikaru Kawarazaki, et al. · International Conference on Ion Implantation Technology · 2
A novel approach for highly activated p+ diffusion layer formation in germanium by pre-heating oxygen desorption before ion implantation
2017 · Tetsuya Igo, Takahiro Higuchi, et al. · International Workshop on Junction Technology · 2
Newly Developed Heat Source Combined with Short-Duration Flash Lamp Annealing (FLA) Featuring a Low Thermal Budget and Low Environmental Load
2021 · Hideaki Tanimura, Masashi Furukawa, et al. · International Workshop on Junction Technology · 1
Conformal Doping with High Dopant Concentration for n+/p and p+/n Si junctions in 3D Devices Using Sol-Gel Coating and Flash Lamp Annealing
2018 · Kazuhiko Fuse, Hideaki Tanimura, et al. · International Conference on Ion Implantation Technology · 1
Leakage current and EOT reduction of HfSiOx Gate Dielectric via Controlled Nitridation Using Millisecond Flash Lamp Annealing
2026 · Yuito Maki, Hayato Watanabe, et al. · International Conference on Solid State Devices and Materials (SSDM)
Oxygen Vacancy Dynamics Governing Wake-Up and Fatigue in Ferroelectric HfO2 Capacitors Revealed by Depth-Resolved HAXPES
2026 · Hideaki Tanimura, Tomoya Mifune, et al. · International Conference on Solid State Devices and Materials (SSDM)
Effects of Al concentration and annealing method on crystalline and ferroelectric properties of Al:HfO 2 thin films
2026 · Tomoya Mifune, Hideaki Tanimura, et al. · Japanese Journal of Applied Physics
Flash-Assisted Flash Lamp Annealing Technology for High (Re-)Activation of Epitaxial Si:P Layers
2025 · Yuma Ueno, Hideaki Tanimura, et al. · International Workshop on Junction Technology
Corrigendum: “Low-thermal-budget crystallization of ferroelectric Al:HfO 2 films by millisecond flash lamp annealing” [Jpn. J. Appl. Phys. 63 09SP10 (2024)]
2024 · Hideaki Tanimura, Yuma Ueno, et al. · Japanese Journal of Applied Physics
PDF
Effects of Millisecond Flash Lamp Annealing on the Polarization and Crystallization in Thin Al:HfO2 Films
2024 · Hideaki Tanimura, Tomoya Mifune, et al. · International Conference on Solid State Devices and Materials (SSDM)
Works count: 40
Citation count: 100
H-index: 6
I10-index: 3
Year
Topic
Type