Author

Kazutada Ikenaga

Observed names: Ikenaga, Kazutada, K. Ikenaga, Kazutada IKENAGA

Institution: Nippon Sanso Corporation (Japan)

Observed institutions: Nagoya Institute of Technology, Nippon Sanso Corporation (Japan), Saitama University, Tokyo University of Agriculture and Technology

ORCID: 0000-0002-0755-5872

Observed ORCID: 0000-0002-0755-5872

OpenAlex ID: A5002614400

GaN growth on 150-mm-diameter (111) Si substrates

2006 · Akinori Ubukata, Kazutada Ikenaga, et al. · Journal of Crystal Growth · 70

Study of carbon concentration in GaN grown by metalorganic chemical vapor deposition

2016 · Guanxi Piao, Kazutada Ikenaga, et al. · Journal of Crystal Growth · 68

Thermodynamic and experimental studies of β-Ga 2 O 3 growth by metalorganic vapor phase epitaxy

2021 · Ken Goto, Kazutada Ikenaga, et al. · Japanese Journal of Applied Physics · 33

High-speed growth of thick high-purity β-Ga2O3 layers by low-pressure hot-wall metalorganic vapor phase epitaxy

2023 · Junya Yoshinaga, Haruka Tozato, et al. · Applied Physics Express · 32

Effect of high temperature homoepitaxial growth of β-Ga2O3 by hot-wall metalorganic vapor phase epitaxy

2022 · Kazutada Ikenaga, Nami Tanaka, et al. · Journal of Crystal Growth · 26

Performance of InGaN/GaN light-emitting diodes grown using NH3with oxygen-containing impurities

2014 · Narihito Okada, Kazuyuki Tadatomo, et al. · Japanese Journal of Applied Physics · 22

Ion-implanted triple-zone graded junction termination extension for vertical GaN p-n diodes

2023 · Yu Duan, Jingshan Wang, et al. · Applied Physics Letters · 20

Growth of silicon-doped Al 0.6 Ga 0.4 N with low carbon concentration at high growth rate using high-flow-rate metal organic vapor phase epitaxy reactor

2016 · Kazutada Ikenaga, Akira Mishima, et al. · Japanese Journal of Applied Physics · 20

Homoepitaxial growth of thick Si-doped β-Ga2O3 layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy

2025 · Junya Yoshinaga, Yoshiki Iba, et al. · Applied Physics Express · 14

Improving the light output power of DUV-LED by introducing an intrinsic last quantum barrier interlayer on the high-quality AlN template

2017 · Chia-Lung Tsai, Hsueh-Hsing Liu, et al. · Solid-State Electronics · 12

Ethylene polymerization over zirconocenes supported on alumina- and titania-based acidic oxides

2006 · Kazutada Ikenaga, Shuzuan Chen, et al. · Catalysis Communications · 11

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

2017 · D. D. Koleske, J. J. Figiel, et al. · Applied Physics Letters · 10

Evaluation of Performance of InGaN/GaN Light-Emitting Diodes Fabricated Using NH3 with Intentionally Added H2O

2009 · Narihito Okada, Fumio Ishida, et al. · Japanese Journal of Applied Physics · 10

Mass spectrometric study of β-Ga2O3 growth process by metalorganic vapor phase epitaxy

2023 · Kazutada Ikenaga, Takahito Okuyama, et al. · Japanese Journal of Applied Physics · 9

Multiwafer atmospheric‐pressure MOVPE reactor for nitride semiconductors and ex‐situ dry cleaning of reactor components using chlorine gas for stable operation

2008 · Hiroki Tokunaga, Yasushi Fukuda, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 8

Comparison of triethylgallium and diethylgallium ethoxide for β -Ga2O3 growth by metalorganic vapor phase epitaxy

2023 · Ken Goto, Taro Nishimura, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 5

Ex situ dry cleaning of reactor component of nitride metal organic chemical vapor deposition using chlorinated gases

2006 · Yasushi Fukuda, Takashi Orita, et al. · Journal of Crystal Growth · 3

New development of inorganic ion exchanger: Ion-exchange Reaction of Layered Sodium Titanate (Na2Ti3O7) with Mono, Di, and Trivalent Ions

2005 · Kazutada IKENAGA, Hideki KUROKAWA, et al. · Journal of Ion Exchange · 3

Growth of silicon-doped Al

2016 · Kazutada Ikenaga, Akira Mishima, et al. · Japanese Journal of Applied Physics · 2

High growth rate of AlGaN for buffer structures for GaN on Si to increase throughput

2012 · Koh Matsumoto, Akinori Ubukata, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2

Criteria for versatile GaN MOVPE tool: high growth rate GaN by atmospheric pressure growth

2011 · Koh Matsumoto, Kazutada Ikenaga, et al. · Journal of Semiconductors · 2

Improving the light output power of DUV-LED by introducing the intrinsic last quantum barrier interlayer on the high-quality AlN template

2016 · Chia-Lung Tsai, Hsueh-Hsing Liu, et al. · International Symposium on Next-Generation Electronics · 1

Present Status and Challenge of Metal Organic Vapor Phase Epitaxy Equipment for the Epitaxial Growth of GaN Power Electronic Devices on Silicon Substrate

2011 · Koh MATSUMOTO, Akinori UBUKATA, et al. · Journal of the Vacuum Society of Japan · 1

有機金属気相エピタキシー法による酸化ガリウム単結晶成長に関する研究

2023 · Ikenaga, Kazutada · Institutional Repositories DataBase (IRDB)

Three-Zone Junction Termination Extensions for Improved Performance of Vertical GaN PN Diodes

2022 · Yu Duan, Piao Guanxi, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)

Works count: 32

Citation count: 384

H-index: 11

I10-index: 13