Author

Alexandre Talbot

Observed names: A Talbot, A. Talbot, Talbot, A.

Observed institution: STMicroelectronics (France)

OpenAlex ID: A5003566779

50 nm-Gate All Around (GAA)-Silicon On Nothing (SON)-devices: a simple way to co-integration of GAA transistors within bulk MOSFET process

2003 · S. Monfray, T. Skotnicki, et al. · Symposium on VLSI Technology · 60

Highly performant double gate MOSFET realized with SON process

2004 · S. Harrison, P. Coronel, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 56

First 80 nm SON (Silicon-On-Nothing) MOSFETs with perfect morphology and high electrical performance

2002 · S. Monfray, T. Skotnicki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 48

Emerging silicon-on-nothing (SON) devices technology

2004 · S. Monfray, T. Skotnicki, et al. · Solid-State Electronics · 47

Facet Propagation in Si and SiGe Epitaxy or Etching

2006 · Didier Dutartre, Alexandre Talbot, et al. · ECS Transactions · 30

SON (Silicon-On-Nothing) P-MOSFETs with totally silicided (CoSi/sub 2/) polysilicon on 5 nm-thick Si-films: the simplest way to integration of metal gates on thin FD channels

2003 · S. Monfray, T. Skotnicki, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 25

Silicon on nothing MEMS electromechanical resonator

2007 · Cédric Durand, Fabrice Casset, et al. · Microsystem Technologies · 23

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SON (silicon-on-nothing) technological CMOS platform: highly performant devices and SRAM cells

2005 · S. Monfray, D. Chanemougame, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 23

High-density plane deposition kinetics and facet propagation in silicon-selective epitaxial growth

2006 · Nicolas Loubet, Alexandre Talbot, et al. · Semiconductor Science and Technology · 10

Performance boost of scaled Si PMOS through novel SiGe stressor for HP CMOS

2005 · D. Chanemougame, S. Monfray, et al. · Symposium on VLSI Technology · 9

Study of the poly/epi kinetic ratio in SiH4 based chemistry for new CMOS architectures

2005 · Alexandre Talbot, Julien Arcamone, et al. · Materials Science in Semiconductor Processing · 7

Growth kinetic and doping of Si and SiGe epi layers on fullsheet substrates

2004 · Alexandre Talbot, Gregory Avenier, et al. · Materials Science and Engineering B · 5

Silicon Etching Study in a RT-CVD Reactor with the HCl/H2 Gas Mixture

2006 · Nicolas Loubet, Alexandre Talbot, et al. · MRS Proceedings · 4

Facet Propagation in Si(Ge) Epitaxy or Etching

2006 · Didier DUTARTRE, Alexandre Talbot, et al. · ECS Meeting Abstracts · 3

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2D Poisson-Schrodinger simulations in ultra-thin silicon-on-nothing devices: quantum effects impact evaluation

2005 · D. Chanemougame, A. Poncet, et al. · IEEE International SOI Conference (SOI) · 3

Selective SiGeC epitaxy by RTCVD for high performance self-aligned HBT

2004 · C. Fellous, F. Deleglise, et al. · IEEE Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS) · 3

3D Nanostructured Silicon Relying on Hard Mask Engineering for High Temperature Annealing (HME-HTA) Processes for Electronic Devices

2008 · M. Bopp, P. Coronel, et al. · Infoscience (Ecole Polytechnique Fédérale de Lausanne) · 2

Low Thermal Budget Activation of B in Si

2006 · H. Bourdon, A. Halimaoui, et al. · International Conference on Advanced Thermal Processing of Semiconductors · 2

An easily integrable NiSi TOSI-gate/SiON-module for LP SRAM applications based on a single step silicidation of gate and junction

2006 · M. Muller, A. Mondot, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 2

High Density Planes Deposition Kinetics and Facets Propagation in Silicon Selective Epitaxial Growth

2006 · N. Loubet, A. Talbot, et al. · 2006 International SiGe Technology and Device Meeting · 2

Metal gate-all-around CMOS integration using poly-gate replacement through contact hole (PRETCH)

2005 · R. Cerutti, P. Coronel, et al. · IEEE International Conference on IC Design and Technology (ICICDT) · 2

Si-SiGe(C) Epitaxy by RTCVD

2007 · Didier Dutartre, F. Deléglise, et al. · CRC Press eBooks · 1

Carbon Incorporation in SiGe Epi Films to Block Boron Diffusion

2006 · Florence Deleglise, Didier Dutartre, et al. · ECS Transactions · 1

Applications of SiGe Material for CMOS and Related Processing

2006 · S. Monfray, T. Skotnicki, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 1

CMP-less integration of 40nm-gate TOtally silicided (TOSI) bulk transistors using selective S/D Si epitaxy and ultra-low gates

2005 · M. Muller, A. Mondot, et al. · European Solid-State Device Research Conference · 1

Works count: 39

Citation count: 371

H-index: 9

I10-index: 9