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Armand Beyer

In situ study on low-k interconnect time-dependent-dielectric-breakdown mechanisms
2014 · Kong Boon Yeap, Martin Gall, et al. · Journal of Applied Physics · 18
Advanced metallization concepts and impact on reliability
2014 · Meike Hauschildt, Bernd Hintze, et al. · Japanese Journal of Applied Physics · 12
In-situ study of the TDDB-induced damage mechanism in Cu/ultra-low-k interconnect structures
2014 · Zhongquan Liao, Martin Gall, et al. · Microelectronic Engineering · 9
Backend-of-line reliability improvement options for 28nm node technologies and beyond
2011 · O. Aubel, C. Hennesthal, et al. · IEEE International Interconnect Technology Conference (IITC) · 7
Comparison of different emitter diffusion methods for MINP solar cells: Thermal diffusion and RTP
2000 · Axel Mrwa, Gunter Ebest, et al. · Solar Energy Materials and Solar Cells · 7
Metal-insulator-semiconductor inversion layer solar cells by using rapid thermal processing
1995 · A. Beyer, G. Ebest, et al. · Applied Physics Letters · 7
A New In Situ Microscopy Approach to Study the Degradation and Failure Mechanisms of Time‐Dependent Dielectric Breakdown: Set‐Up and Opportunities
2014 · Zhongquan Liao, Martin Gall, et al. · Advanced Engineering Materials · 6
An experimental methodology for the in-situ observation of the time-dependent dielectric breakdown mechanism in Copper/low-k on-chip interconnect structures
2013 · Kong Boon Yeap, Martin Gall, et al. · IEEE International Reliability Physics Symposium proceedings · 3
In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
2015 · Zhongquan Liao, Martin Gall, et al. · Journal of Visualized Experiments · 1
Correlation of ramped current to constant voltage gate oxide reliability testing on leading edge DRAM technology
2004 · G. Aichmayr, A. Beyer · IEEE International Integrated Reliability Workshop final report · 1
Plasma induced damage monitoring for HDP processes
2003 · A. Beyer, A. Hausmann, et al. · International Symposium on Plasma Process-Induced Damage · 1
Comparison of two standard WLR current-ramped tests for oxide reliability
2002 · B. Lanchava, P. Baumgartner, et al. · IEEE International Integrated Reliability Workshop final report · 1
In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
2015 · Zhongquan Liao, Martin Gall, et al. · Journal of Visualized Experiments
Empirical BEOL-TDDB evaluation based on I(t)-trace analysis
2014 · O. Aubel, A. Beyer, et al. · Microelectronics Reliability
Correlation between the reliability of HEMT devices and that of a combined oscillator-amplifier MMIC
2001 · Dominique Schreurs, W. De Raedt, et al.
Oxide reliability: influence of interface roughness, structure layout, and depletion layer formation
2001 · B. Lanchava, P. Baumgartner, et al. · Microelectronics Reliability
Response to ‘‘Comment on ‘Metal-insulator-semiconductor inversion layer solar cells by using rapid thermal processing’ ’’ [Appl. Phys. Lett. 68, 2905 (1996)]
1996 · A. Beyer, G. Ebest, et al. · Applied Physics Letters
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Works count: 17
Citation count: 73
H-index: 6
I10-index: 2
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