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Author

M. Myronov

Observed names: M Myronov, M. MYRONOV, Maksym Myronov, Maksym Myronov (3235926), Myronov, M, Myronov, M., Myronov, Maksym
Observed institutions: Universitat Autònoma de Barcelona, Tokyo City University, University of Exeter, University of Cambridge, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Diamond Light Source, CEA Grenoble, University of Warwick, Institut Català de Nanociència i Nanotecnologia, Institut Nanosciences et Cryogénie, Włodzimierz Trzebiatowski Institute of Low Temperature and Structure Research, University of Glasgow, VTT Technical Research Centre of Finland, Daimler (Germany), Université Grenoble Alpes, Ioffe Institute, Musashi University, Polish Academy of Sciences
ORCID: 0000-0001-7757-2187
Observed ORCID: 0000-0001-7757-2187
OpenAlex ID: A5005738456
Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors
2013 · S. Wirths, A. T. Tiedemann, et al. · Applied Physics Letters · 147
Ohmic contacts to n-type germanium with low specific contact resistivity
2012 · K. Gallacher, P. Velha, et al. · Applied Physics Letters · 103
Modelling the inhomogeneous SiC Schottky interface
2013 · P. M. Gammon, A. Pérez-Tomás, et al. · Journal of Applied Physics · 97
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Reverse graded relaxed buffers for high Ge content SiGe virtual substrates
2008 · V. A. Shah, A. Dobbie, et al. · Applied Physics Letters · 92
Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm
2013 · Ryan E. Warburton, Giuseppe Intermite, et al. · IEEE Transactions on Electron Devices · 89
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Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates
2010 · V. A. Shah, A. Dobbie, et al. · Journal of Applied Physics · 86
Mobility spectrum computational analysis using a maximum entropy approach
2002 · S. Kiatgamolchai, M. Myronov, et al. · Physical review. E, Statistical physics, plasmas, fluids, and related interdisciplinary topics · 74
Uprooting defects to enable high-performance III–V optoelectronic devices on silicon
2019 · Youcef A. Bioud, Abderraouf Boucherif, et al. · Nature Communications · 69
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High quality relaxed Ge layers grown directly on a Si(001) substrate
2011 · V.A. Shah, A. Dobbie, et al. · Solid-State Electronics · 58
Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures
2002 · M. Myronov, T. Irisawa, et al. · Applied Physics Letters · 57
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Modulation of the absorption coefficient at 13 μm in Ge/SiGe multiple quantum well heterostructures on silicon
2011 · L. Lever, Y. Hu, et al. · Optics Letters · 56
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Landau polaritons in highly nonparabolic two-dimensional gases in the ultrastrong coupling regime
2020 · Janine Keller, Giacomo Scalari, et al. · Physical review. B./Physical review. B · 52
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Temperature-Dependent Photoluminescence Characteristics of GeSn Epitaxial Layers
2016 · Fabio Pezzoli, Anna Giorgioni, et al. · ACS Photonics · 52
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Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas
2014 · C. Morrison, P. Wiśniewski, et al. · Applied Physics Letters · 51
Hole density dependence of effective mass, mobility and transport time in strained Ge channel modulation-doped heterostructures
2003 · T. Irisawa, M. Myronov, et al. · Applied Physics Letters · 50
Observation of two-dimensional hole gas with mobility and carrier density exceeding those of two-dimensional electron gas at room temperature in the SiGe heterostructures
2007 · M. Myronov, K. Sawano, et al. · Applied Physics Letters · 48
N‐Type Doped Silicon Thin Film on a Porous Cu Current Collector as the Negative Electrode for Li‐Ion Batteries
2017 · Aliya Mukanova, Arailym Nurpeissova, et al. · ChemistryOpen · 47
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Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells
2016 · M Failla, J Keller, et al. · New Journal of Physics · 45
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Holes Outperform Electrons in Group IV Semiconductor Materials
2023 · Maksym Myronov, Jan Kycia, et al. · Small Science · 44
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High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth
2004 · R J H Morris, T J Grasby, et al. · Semiconductor Science and Technology · 43
Mid-infrared light emission > 3 µm wavelength from tensile strained GeSn microdisks
2017 · R. W. Millar, D. C. S. Dumas, et al. · Optics Express · 42
Ballistic One-Dimensional Holes with Strong g-Factor Anisotropy in Germanium
2018 · R. Mizokuchi, R. Maurand, et al. · Nano Letters · 41
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Silicon thin film on graphene coated nickel foam as an anode for Li-ion batteries
2017 · Aliya Mukanova, Arailym Nurpeissova, et al. · Electrochimica Acta · 41
Temperature dependence of the breakdown of the quantum Hall effect studied by induced currents
2004 · A. Matthews, K. Kavokin, et al. · Physical Review B · 38
Spin-coherent dynamics and carrier lifetime in strained Ge1−xSnx semiconductors on silicon
2019 · S. De Cesari, A. Balocchi, et al. · Physical review. B./Physical review. B · 35
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Works count: 302
Citation count: 3,060
H-index: 29
I10-index: 85
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