Author

Youcef Kribes

Observed name: Y Kribes

Institution: Centre de Développement des Technologies Avancées

Observed institutions: University of Nottingham, University of Boumerdes, Centre de Développement des Technologies Avancées

OpenAlex ID: A5006060822

Investigation of Au Schottky contacts on GaN grown by molecular beam epitaxy

1997 · Y Kribes, I Harrison, et al. · Semiconductor Science and Technology · 44

On the permanent component profiling of the negative bias temperature instability in p-MOSFET devices

2015 · Boualem Djezzar, Hakim Tahi, et al. · Solid-State Electronics · 14

A New Method for Negative Bias Temperature Instability Assessment in P-Channel Metal Oxide Semiconductor Transistors

2012 · Boualem Djezzar, Hakim Tahi, et al. · Japanese Journal of Applied Physics · 10

Geometric Component in Constant-Amplitude Charge-Pumping Characteristics of LOCOS- and LDD-MOSFET Devices

2010 · Hakim Tahi, Boualem Djezzar, et al. · IEEE Transactions on Device and Materials Reliability · 9

Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy

1997 · Y Kribes, I Harrison, et al. · Semiconductor Science and Technology · 6

Oxide Charges Densities Determination Using Charge-Pumping Technique With BTS in MOS Structures

2008 · Hamid Bentarzi, Abdelkader Zitouni, et al. · 3

A new method of oxide charges densities determination using charge-pumping technique in MOS structures

2008 · Hamid Bentarzi, Abdelkader Zitouni, et al. · International Conference on Microelectronics

Works count: 7

Citation count: 86

H-index: 5

I10-index: 3