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Munechika Azuchi
Observed names:
Azuchi, Munechika,
M. Azuchi
Observed institution:
Tokyo Institute of Technology
OpenAlex ID:
A5006152613
Highly strained GaInAs-GaAs quantum-well vertical-cavity surface-emitting laser on GaAs (311)B substrate for stable polarization operation
2001
·
N. Niskiyama
, M. Arai
, et al.
·
IEEE Journal of Selected Topics in Quantum Electronics
·
39
Multi-oxide layer vertical-cavity surface-emitting lasers with improved modulation bandwidth
2004
·
M. Azuchi
, N. Jikutani
, et al.
·
14
Low Threshold Current Density Operation of 1.16 µm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate
2002
·
Takashi Kondo
, Masakazu Arai
, et al.
·
Japanese Journal of Applied Physics
·
11
Singlemode fibre transmission using 1.2 µm band GaInAs/GaAs surface emitting laser
2002
·
T. Kondo
, M. Arai
, et al.
·
Electronics Letters
·
10
Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells
2002
·
Takashi Kondo
, Masakazu Arai
, et al.
·
Japanese Journal of Applied Physics
·
5
PDF
Monolithic Formation of Metal Organic Chemical Vapor Deposition Grown Multi-wavelength Vertical Cavities with Highly Strained GaInAs/GaAs Quantum Wells on GaAs (311)B
2001
·
Masakazu Arai
, Nobuhiko Nishiyama
, et al.
·
Japanese Journal of Applied Physics
·
5
Temperature characteristics of 1.16 μm highly strained GaInAs/GaAs VCSELs
2002
·
Takashi Kondo
, Masakazu Arai
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
2
1.12 µm Polarization Controlled Highly Strained GaInAs Vertical-Cavity Surface-Emitting Lasers on GaAs(311)B by Metal Organic Chemical Vapor Deposition
2001
·
Nobuhiko Nishiyama
, Masakazu Arai
, et al.
·
Japanese Journal of Applied Physics
·
2
PDF
1.2 μm band multiple-wavelength GaInAs/GaAs vertical cavity surface emitting laser array on patterned substrate
2003
·
M. Arai
, T. Kondo
, et al.
·
Conference proceedings. ... International Conference on Indium Phosphide and Related Materials
·
1
GalnAs/GaAs Single Mode Veritical Cavity Surface Emitting Laser (VCSEL) Array on GaAs (311)B
2001
·
Masakazu Arai
, Nobuhiko Nishiyama
, et al.
·
IEICE Transactions on Electronics
·
1
Modulation characteristics of highly strained 1100 nm GaInAs/GaAs vertical cavity surface emitting laser on GaAs (311)B
2002
·
M. Arai
, N. Nishiyama
, et al.
·
Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)
Effect of Annealing on Highly Strained GaInAs/GaAs Quantum Wells : Semiconductors
2002
·
Takashi Kondo
, Masakazu Arai
, et al.
·
Japanese Journal of Applied Physics
Low Threshold Current Density Operation of 1.16μm Highly Strained GaInAs/GaAs Vertical Cavity Surface Emitting Lasers on (100) GaAs Substrate : Optics and Quantum Electronics
2002
·
Takashi Kondo
, Masakazu Arai
, et al.
·
Japanese Journal of Applied Physics
Multiwavelength Vertical Cavity Surface Emitting Laser Array
2001
·
M. Arai
, Tatsuya Kondo
, et al.
·
Proceedings of the Society Conference of IEICE
1.12μm PolariZation Controlled Highly Strained GalnAs Vertical-Cavity Surface-Emitting Lasers on GaAs(311)B by Metal Organic Chemical Vapor Deposition : Optics and Quantum Electronics
2001
·
Nobuhiko Nishiyama
, Masakazu Arai
, et al.
·
Japanese Journal of Applied Physics
1.12μm polarization controlled highly strained GaInAs vertical-cavity surface-emitting lasers on GaAs (311)B by metal organic chemical vapor deposition
2001
·
西山, 伸彦
, Nishiyama, Nobuhiko
, et al.
·
Institutional Repositories DataBase (IRDB)
Monolithic formation of metal organic chemical vapor deposition grown multi-wavelength vertical cavities with highly strained GaInAs/GaAs quantum wells on GaAs (311)B
2001
·
荒井, 昌和
, Arai, Masakazu
, et al.
·
Institutional Repositories DataBase (IRDB)
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Works count:
19
Citation count:
90
H-index:
5
I10-index:
4
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