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Áron Szabó

Observed names: A Szabo, A. Szabo, Aron Szabo, Szabo Aron, Szabo, Aron, Szabó, Aron, Szabó, Áron, Á. Szabó, Áron SZABÓ, Áron Śzabo
ORCID: 0000-0001-6588-6197
Observed ORCID: 0000-0001-6588-6197
OpenAlex ID: A5006495791
Ab initiosimulation of single- and few-layer MoS2 transistors: Effect of electron-phonon scattering
2015 · Áron Szabó, Reto Rhyner, et al. · Physical Review B · 115
One-Dimensional Edge Contacts to a Monolayer Semiconductor
2019 · Achint Jain, Áron Szabó, et al. · Nano Letters · 107
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Light from van der Waals quantum tunneling devices
2019 · Markus Parzefall, Áron Szabó, et al. · Nature Communications · 95
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2-D Materials for Ultrascaled Field-Effect Transistors: One Hundred Candidates under the Ab Initio Microscope
2020 · Cedric Klinkert, Áron Szabó, et al. · ACS Nano · 94
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Ab-Initio Simulation of van der Waals MoTe2–SnS2 Heterotunneling FETs for Low-Power Electronics
2015 · Aron Szabo, Steven J. Koester, et al. · IEEE Electron Device Letters · 87
MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts
2019 · Yashwanth Balaji, Quentin Smets, et al. · Advanced Functional Materials · 80
Electron Transport through Metal/MoS 2 Interfaces: Edge- or Area-Dependent Process?
2019 · Áron Szabó, Achint Jain, et al. · Nano Letters · 65
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Group-II acceptors in wurtzite AlN: A screened hybrid density functional study
2010 · Áron Szabó, Ngyen Tien Son, et al. · Applied Physics Letters · 46
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Ab Initio Simulation of Band-to-Band Tunneling FETs With Single- and Few-Layer 2-D Materials as Channels
2018 · Aron Szabo, Cedric Klinkert, et al. · IEEE Transactions on Electron Devices · 36
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Effect of oxygen on single-wall silicon carbide nanotubes studied by first-principles calculations
2009 · Á. Szabó, A. Gali · Physical Review B · 35
Phonon-limited performance of single-layer, single-gate black phosphorus n- and p-type field-effect transistors
2015 · Aron Szabo, Reto Rhyner, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 32
First-principles simulations of 2-D semiconductor devices: Mobility, I-V characteristics, and contact resistance
2016 · M. Luisier, A. Szabo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 31
Benchmarking of monolithic 3D integrated MX2 FETs with Si FinFETs
2017 · T. Agarwal, A. Szabo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 24
Metal-dichalcogenide hetero-TFETs: Are they a viable option for low power electronics?
2014 · Aron Szabo, Steven J. Koester, et al. · Conference digest · 22
Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials
2017 · Christian Stieger, Aron Szabo, et al. · Journal of Applied Physics · 19
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Under-the-Barrier Model: An Extension of the Top-of-the-Barrier Model to Efficiently and Accurately Simulate Ultrascaled Nanowire Transistors
2013 · Aron Szabo, Mathieu Luisier · IEEE Transactions on Electron Devices · 16
Defects at nitrogen site in electron-irradiated AlN
2011 · N. T. Son, A. Gali, et al. · Applied Physics Letters · 16
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Ab-initio simulations of MoS2 transistors: From mobility calculation to device performance evaluation
2014 · Aron Szabo, Reto Rhyner, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 15
Dissipative quantum transport simulations in two-dimensional semiconductor devices from first principles
2016 · Szabó, Áron · Repository for Publications and Research Data (ETH Zurich) · 8
Atomistic simulation of nanodevices
2016 · Mathieu Luisier, Reto Rhyner, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 4
Full-band simulation of p-type ultra-scaled silicon nanowire transistors
2013 · Aron Szabo, Mathieu Luisier · European Solid-State Device Research Conference · 4
Field-Effect Transistors based on 2-D Materials: a Modeling Perspective
2023 · Luisier, Mathieu, Klinkert, Cedric, et al. · arXiv (Cornell University) · 1
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Field‐Effect Transistors Based on 2D Materials
2023 · Mathieu LUISIER, Cedric KLINKERT, et al. · Wiley eBooks · 1
Ab-initio modeling of self-heating in single-layer MoS2 transistors
2017 · Christian Stieger, Aron Szabo, et al. · Conference digest · 1
Paving the way for ultimate device scaling through nanoelectronic device simulations
2013 · M. Luisier, A. Szabo · Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon · 1
Works count: 41
Citation count: 955
H-index: 16
I10-index: 18
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