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Elia Ambrosi

Observed names: Ambrosi, Elia, E Ambrosi, E. Ambrosi
ORCID: 0000-0002-5418-7099
Observed ORCID: 0000-0002-5418-7099
OpenAlex ID: A5006552129
Surface diffusion-limited lifetime of silver and copper nanofilaments in resistive switching devices
2019 · Wei Wang, Ming Wang, et al. · Nature Communications · 343
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Solving matrix equations in one step with cross-point resistive arrays
2019 · Zhong Sun, Giacomo Pedretti, et al. · Proceedings of the National Academy of Sciences · 295
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Silicon Oxide (SiOx): A Promising Material for Resistance Switching?
2018 · Adnan Mehonic, Alexander L. Shluger, et al. · Advanced Materials · 217
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Logic Computing with Stateful Neural Networks of Resistive Switches
2018 · Zhong Sun, Elia Ambrosi, et al. · Advanced Materials · 176
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Impact of oxide and electrode materials on the switching characteristics of oxide ReRAM devices
2018 · Elia Ambrosi, Alessandro Bricalli, et al. · Faraday Discussions · 106
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Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part I: Memory Devices
2017 · Alessandro Bricalli, Elia Ambrosi, et al. · IEEE Transactions on Electron Devices · 87
SiOx-based resistive switching memory (RRAM) for crossbar storage/select elements with high on/off ratio
2016 · A. Bricalli, E. Ambrosi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 77
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling
2019 · Wei Wang, Mario Laudato, et al. · IEEE Transactions on Electron Devices · 76
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Resistive Switching Device Technology Based on Silicon Oxide for Improved ON–OFF Ratio—Part II: Select Devices
2017 · Alessandro Bricalli, Elia Ambrosi, et al. · IEEE Transactions on Electron Devices · 70
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion—Part II: Compact Modeling
2019 · Wei Wang, Mario Laudato, et al. · IEEE Transactions on Electron Devices · 61
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Time Complexity of In-Memory Solution of Linear Systems
2020 · Zhong Sun, Giacomo Pedretti, et al. · IEEE Transactions on Electron Devices · 60
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Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part I: Experimental Characterization
2021 · Erika Covi, Wei Wang, et al. · IEEE Transactions on Electron Devices · 58
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In-Memory PageRank Accelerator With a Cross-Point Array of Resistive Memories
2020 · Zhong Sun, Elia Ambrosi, et al. · IEEE Transactions on Electron Devices · 54
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Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices—Part II: Mechanism and Modeling
2021 · Wei Wang, Erika Covi, et al. · IEEE Transactions on Electron Devices · 52
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Conductance variations and their impact on the precision of in-memory computing with resistive switching memory (RRAM)
2021 · Giacomo Pedretti, Elia Ambrosi, et al. · IEEE International Reliability Physics Symposium proceedings · 41
High RA Dual-MTJ SOT-MRAM devices for High Speed (10ns) Compute-in-Memory Applications
2023 · M. Y. Song, K. L. Chen, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 27
A Volatile RRAM Synapse for Neuromorphic Computing
2019 · E. Covi, Y.-H. Lin, et al. · IEEE International Conference on Electronics, Circuits and Systems (ICECS) · 27
Low variability high endurance and low voltage arsenic-free selectors based on GeCTe
2021 · E. Ambrosi, C. H. Wu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 26
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing
2018 · W. Wang, A. Bricalli, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 26
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Reliable Low Voltage Selector Device Technology Based on Robust SiNGeCTe Arsenic-Free Chalcogenide
2022 · Elia Ambrosi, Cheng-Hsien Wu, et al. · IEEE Electron Device Letters · 18
Resistive switching synapses for unsupervised learning in feed-forward and recurrent neural networks
2018 · V. Milo, G. Pedretti, et al. · IEEE International Symposium on Circuits and Systems proceedings · 15
First Demonstration of an N-P Oxide Semiconductor Complementary Gain Cell Memory
2024 · F. F. Athena, E. Ambrosi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 14
Low voltage (<1.8 V) and high endurance (>1M) 1-Selector/1-STT-MRAM with ultra-low (1 ppb) read disturb for high density embedded memory arrays
2023 · E. Ambrosi, C. H. Wu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 14
Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion
2019 · Wei Wang, Erika Covi, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 14
First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors
2022 · S. Vaziri, I. M. Datye, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 11
Works count: 49
Citation count: 2,022
H-index: 19
I10-index: 26
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