Author

Carl G. Hemmingsson

Observed names: C G Hemmingsson, C Hemmingsson, C. G Hemmingsson, C. G. Hemmingsson, C. Hemmingsson, C.G. Hemmingsson, Carl Hemmingsson, Hemmingsson, Carl

Institution: Linköping University

Observed institutions: Linköping University, Japan Atomic Energy Agency, Furukawa Co., Ltd. (Japan), Trường Đại học Khoa học và Công nghệ Hà Nội, Hanoi University of Science and Technology, Meijo University

ORCID: 0000-0002-2597-3322

Observed ORCID: 0000-0002-2597-3322

OpenAlex ID: A5006974370

Deep level defects in electron-irradiated 4H SiC epitaxial layers

1997 · C. Hemmingsson, N. T. Son, et al. · Journal of Applied Physics · 322

Negative-Ucenters in 4Hsilicon carbide

1998 · C. G. Hemmingsson, N. T. Son, et al. · Physical review. B, Condensed matter · 170

Evidence for Two Mg Related Acceptors in GaN

2009 · B. Monemar, P. P. Paskov, et al. · Physical Review Letters · 131

Properties of the main Mg-related acceptors in GaN from optical and structural studies

2014 · B. Monemar, P. P. Paskov, et al. · Journal of Applied Physics · 61

Growth of thick GaN layers with hydride vapour phase epitaxy

2005 · B. Monemar, H. Larsson, et al. · Journal of Crystal Growth · 60

Capture cross sections of electron irradiation induced defects in 6H–SiC

1998 · C. Hemmingsson, N. T. Son, et al. · Journal of Applied Physics · 57

Strain-free bulk-like GaN grown by hydride-vapor-phase-epitaxy on two-step epitaxial lateral overgrown GaN template

2004 · D. Gogova, A. Kasic, et al. · Journal of Applied Physics · 56

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Emission properties of Ga2O3 nano-flakes: effect of excitation density

2017 · G. Pozina, M. Forsberg, et al. · Scientific Reports · 54

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Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

2011 · G. Pozina, S. Khromov, et al. · Physical Review B · 51

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Identification of the gallium vacancy–oxygen pair defect in GaN

2009 · N. T. Son, C. G. Hemmingsson, et al. · Physical Review B · 48

HTCVD growth of semi-insulating 4H-SiC crystals with low defect density

2000 · A. Ellison, B. Magnusson, et al. · MRS Proceedings · 47

Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy

2013 · Tran Thien Duc, Galia Pozina, et al. · Journal of Applied Physics · 46

Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor

2020 · Galia Pozina, Chih-Wei Hsu, et al. · Scientific Reports · 45

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Barrier height determination for n-type 4H-SiC schottky contacts made using various metals

1998 · R. Yakimova, C. Hemmingsson, et al. · Journal of Electronic Materials · 43

Hydride vapour phase epitaxy growth and characterization of thick GaN using a vertical HVPE reactor

2006 · C. Hemmingsson, P.P. Paskov, et al. · Journal of Crystal Growth · 41

2011 · S. Khromov, C. G. Hemmingsson, et al. · Physical Review B · 38

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Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments

2000 · Alexsandre Ellison, Jie Zhang, et al. · Materials science forum · 38

Observation of negative-U centers in 6H silicon carbide

1999 · C. G. Hemmingsson, N. T. Son, et al. · Applied Physics Letters · 38

Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates

2007 · G. Pozina, P. P. Paskov, et al. · Applied Physics Letters · 37

Photoluminescence determination of the nitrogen doping concentration in 6H-SiC

1994 · A. Henry, O. Kordina, et al. · Applied Physics Letters · 35

Optimization of low temperature GaN buffer layers for halide vapor phase epitaxy growth of bulk GaN

2012 · Carl Hemmingsson, Galia Pozina · Journal of Crystal Growth · 33

SiC – a semiconductor for high-power, high-temperature and high-frequency devices

1994 · E Janzén, O Kordina, et al. · Physica Scripta · 32

Deep levels in iron doped n- and p-type 4H-SiC

2011 · F. C. Beyer, C. G Hemmingsson, et al. · Journal of Applied Physics · 30

Growth of GaN nanotubes by halide vapor phase epitaxy

2011 · Carl Hemmingsson, Galia Pozina, et al. · Nanotechnology · 30

Growth of bulk GaN in a vertical hydride vapour phase epitaxy reactor

2006 · C. Hemmingsson, P.P. Paskov, et al. · Superlattices and Microstructures · 30

Works count: 100

Citation count: 2,243

H-index: 27

I10-index: 53