Get started
Author

Daeseok Lee

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
2011 · Kwang Hwan Ji, Ji-In Kim, et al. · Applied Physics Letters · 300
Threshold Selector With High Selectivity and Steep Slope for Cross-Point Memory Array
2015 · Jeonghwan Song, Jiyong Woo, et al. · IEEE Electron Device Letters · 169
High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays
2012 · Wootae Lee, Jubong Park, et al. · ACS Nano · 155
Applicability of Aerosol Deposition Process for flexible electronic device and determining the Film Formation Mechanism with Cushioning Effects
2019 · Chuljun Lee, Myung-Yeon Cho, et al. · Scientific Reports · 121
PDF
Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application
2016 · Euijun Cha, Jaehyuk Park, et al. · Applied Physics Letters · 113
Diode-less nano-scale ZrOx/HfOx RRAM device with excellent switching uniformity and reliability for high-density cross-point memory applications
2010 · Joonmyoung Lee, Jungho Shin, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 94
Ultrathin (<10nm) Nb2O5/NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications
2012 · Seonghyun Kim, Xinjun Liu, et al. · Symposium on VLSI Technology · 92
PDF
Co-Occurrence of Threshold Switching and Memory Switching in $\hbox{Pt}/\hbox{NbO}_{x}/\hbox{Pt}$ Cells for Crosspoint Memory Applications
2011 · Xinjun Liu, Sharif Md. Sadaf, et al. · IEEE Electron Device Letters · 90
PDF
Nanoscale (∼10nm) 3D vertical ReRAM and NbO2 threshold selector with TiN electrode
2013 · Euijun Cha, Jiyong Woo, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 89
Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories
2013 · Seonghyun Kim, Jubong Park, et al. · Microelectronic Engineering · 68
Complementary Resistive Switching in Niobium Oxide-Based Resistive Memory Devices
2013 · Xinjun Liu, Sharif Md. Sadaf, et al. · IEEE Electron Device Letters · 68
Self-Selective Characteristics of Nanoscale $ \hbox{VO}_{x}$ Devices for High-Density ReRAM Applications
2012 · Myungwoo Son, Xinjun Liu, et al. · IEEE Electron Device Letters · 60
Hardware implementation of associative memory characteristics with analogue-type resistive-switching device
2014 · Kibong Moon, Sangsu Park, et al. · Nanotechnology · 59
PDF
Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application
2015 · Jeonghwan Song, Amit Prakash, et al. · Applied Physics Letters · 49
Effects of RESET Current Overshoot and Resistance State on Reliability of RRAM
2014 · Jeonghwan Song, Daeseok Lee, et al. · IEEE Electron Device Letters · 48
Two-Terminal Structured Synaptic Device Using Ionic Electrochemical Reaction Mechanism for Neuromorphic System
2019 · Chuljun Lee, Jaewon Lee, et al. · IEEE Electron Device Letters · 47
Oxide based nanoscale analog synapse device for neural signal recognition system
2015 · Daeseok Lee, Jaesung Park, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 47
Structurally Engineered Stackable and Scalable 3D Titanium‐Oxide Switching Devices for High‐Density Nanoscale Memory
2014 · Daeseok Lee, Jaesung Park, et al. · Advanced Materials · 45
Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays
2012 · Wootae Lee, Jubong Park, et al. · Symposium on VLSI Technology · 44
Effect of Program/Erase Speed on Switching Uniformity in Filament-Type RRAM
2011 · Jungho Shin, Jubong Park, et al. · IEEE Electron Device Letters · 38
Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications
2012 · Sangsu Park, Seungjae Jung, et al. · physica status solidi (RRL) - Rapid Research Letters · 35
Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices
2012 · Seonghyun Kim, Daeseok Lee, et al. · Nanotechnology · 35
PDF
Noise-Analysis-Based Model of Filamentary Switching ReRAM With $\hbox{ZrO}_{x}/\hbox{HfO}_{x}$ Stacks
2011 · Daeseok Lee, Joonmyoung Lee, et al. · IEEE Electron Device Letters · 35
Control of Cu Conductive Filament in Complementary Atom Switch for Cross-Point Selector Device Application
2014 · Jiyong Woo, Daeseok Lee, et al. · IEEE Electron Device Letters · 34
Novel cross-point resistive switching memory with self-formed schottky barrier
2010 · Minseok Jo, Dong-jun Seong, et al. · Symposium on VLSI Technology · 34
Works count: 116
Citation count: 2,936
H-index: 30
I10-index: 65
Year
Topic
Type