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Chanyoung Yoo

Observed names: Yoo Chanyoung, 유찬영
Institution: Hongik University
ORCID: 0000-0002-6357-4103
Observed ORCID: 0000-0002-6357-4103
OpenAlex ID: A5008117265
Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films
2018 · Young Hwan Lee, Seung Dam Hyun, et al. · Advanced Electronic Materials · 89
Atomic layer deposition of chalcogenides for next-generation phase change memory
2021 · Yoon Kyeung Lee, Chanyoung Yoo, et al. · Journal of Materials Chemistry C · 57
Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior
2018 · Sijung Yoo, Chanyoung Yoo, et al. · Journal of Materials Chemistry C · 46
Atomic Layer Deposition of GexSe1–x Thin Films for Endurable Ovonic Threshold Selectors with a Low Threshold Voltage
2020 · Chanyoung Yoo, Woohyun Kim, et al. · ACS Applied Materials & Interfaces · 41
Atomic Layer Deposition of WO3-Doped In2O3 for Reliable and Scalable BEOL-Compatible Transistors
2024 · Chanyoung Yoo, Jonathan Hartanto, et al. · Nano Letters · 38
Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms
2017 · Taehong Gwon, Taeyong Eom, et al. · Chemistry of Materials · 37
Atomic Layer Deposition of Sb2Te3/GeTe Superlattice Film and Its Melt‐Quenching‐Free Phase‐Transition Mechanism for Phase‐Change Memory
2022 · Chanyoung Yoo, Jeong Woo Jeon, et al. · Advanced Materials · 36
Atomic layer deposition of GeSe films using HGeCl 3 and [(CH 3 ) 3 Si] 2 Se with the discrete feeding method for the ovonic threshold switch
2018 · Woohyun Kim, Sijung Yoo, et al. · Nanotechnology · 31
Neuromorphic olfaction with ultralow-power gas sensors and ovonic threshold switch
2025 · Mingu Kang, Joon-Kyu Han, et al. · Science Advances · 29
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Atomic Layer Deposition of Nanocrystalline-As-Deposited (GeTe)x(Sb2Te3)1–x Films for Endurable Phase Change Memory
2019 · Eui-Sang Park, Chanyoung Yoo, et al. · Chemistry of Materials · 28
Developing Precursor Chemistry for Atomic Layer Deposition of High-Density, Conformal GeTe Films for Phase-Change Memory
2019 · Eui-Sang Park, Chanyoung Yoo, et al. · Chemistry of Materials · 27
Matrix Mapping on Crossbar Memory Arrays with Resistive Interconnects and Its Use in In-Memory Compression of Biosignals
2019 · Yoon Kyeung Lee, Jeong Woo Jeon, et al. · Micromachines · 22
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Enhanced Switching Reliability of Hf0.5Zr0.5O2 Ferroelectric Films Induced by Interface Engineering
2023 · Fei Huang, Balreen Saini, et al. · ACS Applied Materials & Interfaces · 21
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Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode
2019 · Woohyun Kim, Chanyoung Yoo, et al. · ACS Applied Materials & Interfaces · 20
Enhancement-Mode Atomic Layer Deposited W-Doped In2O3 Transistor at 55 nm Channel Length by Oxide Capping Layer with Improved Stability
2024 · Qing Lin, Nathaniel Safron, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 16
Influences of oxygen source and substrate temperature on the unusual growth mechanism of atomic layer deposited magnesium oxide using bis(cyclopentadienyl)magnesium precursor
2021 · Bo Wen Wang, Jinwoo Choi, et al. · Journal of Materials Chemistry C · 15
Atomic Layer Deposition of SnTe Thin Film Using Sn(N(CH3)2)4 and Te(Si(CH3)3)2 with Ammonia Coinjection
2020 · Yoon Kyeung Lee, Eui-Sang Park, et al. · Crystal Growth & Design · 13
Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition
2017 · Taehong Gwon, Ahmed Yousef Mohamed, et al. · ACS Applied Materials & Interfaces · 13
Vertically Stackable Ovonic Threshold Switch Oscillator Using Atomic Layer Deposited Ge0.6Se0.4 Film for High-Density Artificial Neural Networks
2024 · Jeong Woo Jeon, Byongwoo Park, et al. · ACS Applied Materials & Interfaces · 12
A Review of Advances in Deposition Methods and Material Properties of Superlattice Phase-Change Memory
2023 · Chanyoung Yoo, Jeong Woo Jeon, et al. · ACS Applied Electronic Materials · 11
Atomic layer deposition of SnSe x thin films using Sn(N(CH 3 ) 2 ) 4 and Se(Si(CH 3 ) 3 ) 2 with NH 3 co-injection
2021 · Jeong Woo Jeon, Chanyoung Yoo, et al. · Dalton Transactions · 11
Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory
2019 · Seung Ik Oh, In Hyuk Im, et al. · Micromachines · 11
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Top-to-Bottom Local Epitaxial Growth of the Two-Dimensional Antimony Telluride Film by Atomic Layer Deposition Using Sacrificial Germanium Telluride
2023 · Chanyoung Yoo, Wonho Choi, et al. · Chemistry of Materials · 7
High-Dielectric Ultrathin BaTiO3 Anode via Electrophoretic Deposition: A Platform for Pseudocapacitive Li Storage and Interface Stabilization
2025 · Ji-Yeon Lee, Jiwon Shin, et al. · ACS Applied Energy Materials · 6
Influence of Ge precursors toward atomic layer deposition of germanium tellurides: A DFT study
2025 · Hyeon Cho, Chanyoung Yoo, et al. · Vacuum · 5
Works count: 37
Citation count: 658
H-index: 15
I10-index: 22
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