Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms
Year: 2017
Type: article
Source: Chemistry of Materials
Institution: Seoul National University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
Awards: G1016333064, G6630784056
OpenAlex ID: W2755259986