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Manchao Xiao
Observed institutions:
Washington University in St. Louis,
China University of Geosciences,
Air Products (United States)
OpenAlex ID:
A5111703198
Diadamantylsilylene and its stereochemistry of addition
1991
·
Dong Ho Pae
, Manchao Xiao
, et al.
·
Journal of the American Chemical Society
·
98
The quest for triplet ground state silylenes
2002
·
Peter P. Gaspar
, Manchao Xiao
, et al.
·
Journal of Organometallic Chemistry
·
68
Conformal Formation of (GeTe2)(1–x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories
2012
·
Taeyong Eom
, Seol Choi
, et al.
·
Chemistry of Materials
·
61
On the Mechanisms of SiO 2 Thin-Film Growth by the Full Atomic Layer Deposition Process Using Bis( t -butylamino)silane on the Hydroxylated SiO 2 (001) Surface
2011
·
Bo Han
, Qingfan Zhang
, et al.
·
The Journal of Physical Chemistry C
·
53
On the Dissociative Chemisorption of Tris(dimethylamino)silane on Hydroxylated SiO 2 (001) Surface
2009
·
Jiaye Li
, Jinping Wu
, et al.
·
The Journal of Physical Chemistry C
·
48
Atomic Layer Deposition of Silicon Dioxide Using Aminosilanes Di- sec -butylaminosilane and Bis( tert -butylamino)silane with Ozone
2016
·
Luis Fabián Peña
, Charith E. Nanayakkara
, et al.
·
The Journal of Physical Chemistry C
·
47
Density functional theory study on the full ALD process of silicon nitride thin film deposition via BDEAS or BTBAS and NH 3
2014
·
Liang Huang
, Bo Han
, et al.
·
Physical Chemistry Chemical Physics
·
39
Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms
2017
·
Taehong Gwon
, Taeyong Eom
, et al.
·
Chemistry of Materials
·
37
Atomic Layer Deposition of GeTe Films Using Ge{N[Si(CH3)3]2}2, {(CH3)3Si}2Te, and Methanol
2016
·
Taehong Gwon
, Taeyong Eom
, et al.
·
Chemistry of Materials
·
36
Stereocontrolled double ring expansion of fused allylidenecyclopropanes. A novel route to hydroazulenes and other fused bicyclic systems
1993
·
Craig A. Shook
, Matthew L. Romberger
, et al.
·
Journal of the American Chemical Society
·
32
Designing high performance precursors for atomic layer deposition of silicon oxide
2014
·
Anupama Mallikarjunan
, Haripin Chandra
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
30
Combined Ligand Exchange and Substitution Reactions in Atomic Layer Deposition of Conformal Ge2Sb2Te5 Film for Phase Change Memory Application
2015
·
Taeyong Eom
, Taehong Gwon
, et al.
·
Chemistry of Materials
·
28
Silicon precursor development for advanced dielectric barriers for VLSI technology
2011
·
Anupama Mallikarjunan
, Andrew D. Johnson
, et al.
·
Microelectronic Engineering
·
28
Influence of the Kinetic Adsorption Process on the Atomic Layer Deposition Process of (GeTe2)(1–x)(Sb2Te3)x Layers Using Ge4+–Alkoxide Precursors
2014
·
Taeyong Eom
, Taehong Gwon
, et al.
·
Chemistry of Materials
·
24
First-Principles Study of a Full Cycle of Atomic Layer Deposition of SiO2Thin Films with Di(sec-butylamino)silane and Ozone
2013
·
Liang Huang
, Bo Han
, et al.
·
The Journal of Physical Chemistry C
·
22
Chemical interaction and ligand exchange between a [(CH 3 ) 3 Si] 3 Sb precursor and atomic layer deposited Sb 2 Te 3 films
2014
·
Taeyong Eom
, Taehong Gwon
, et al.
·
Journal of Materials Chemistry C
·
16
In Situ Infrared Absorption Study of Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride
2018
·
Luis Fabián Peña
, Eric C. Mattson
, et al.
·
Langmuir
·
11
Atomic layer deposition of carbon doped silicon oxide by precursor design and process tuning
2018
·
Meiliang Wang
, Haripin Chandra
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
7
Nanosession: Atomic Layer Deposition
2012
·
Cheol Seong Hwang
, Woongkyu Lee
, et al.
·
Frontiers in Electronic Materials
Precursor design and engineering for low-temperature deposition of gate dielectrics for thin film transistors
2011
·
Anupama Mallikarjunan
, Laura M Matz
, et al.
·
MRS Proceedings
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Works count:
20
Citation count:
685
H-index:
16
I10-index:
17
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