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C. J. Polley

Observed names: C. Polley, C.J Polley, C.J. Polley, Christina Polley
Observed institution: SVT Associates (United States)
OpenAlex ID: A5008595981
dc and rf performance of proton-irradiated AlGaN/GaN high electron mobility transistors
2001 · B. Luo, J. W. Johnson, et al. · Applied Physics Letters · 121
Influence of Co60 γ-rays on dc performance of AlGaN/GaN high electron mobility transistors
2002 · B. Luo, J. W. Johnson, et al. · Applied Physics Letters · 88
High-energy proton irradiation effects on AlGaN/GaN high-electron mobility transistors
2002 · B. Luo, J. W. Johnson, et al. · Journal of Electronic Materials · 51
Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE
2001 · J.W Johnson, A.G Baca, et al. · Solid-State Electronics · 35
GaN PN junction issues and developments
2000 · R Hickman, J.M Van Hove, et al. · Solid-State Electronics · 27
High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors
2000 · X.A Cao, J.M Van Hove, et al. · Solid-State Electronics · 15
Simulation of GaN/AlGaN heterojunction bipolar transistors: part I – npn structures
2000 · X.A Cao, J.M Van Hove, et al. · Solid-State Electronics · 13
Group III-nitride materials for ultraviolet detection applications
2000 · Peter P. Chow, Jody J. Klaassen, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 12
Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence
1998 · J. M. Van Hove, P. P. Chow, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 12
Simulation of GaN/AlGaN heterojunction bipolar transistors: part II – pnp structures
2000 · X.A Cao, J.M Van Hove, et al. · Solid-State Electronics · 11
Visible Blind uv GaN Photovoltaic Detector Arrays Grown by rf Atomic Nitrogen Plasma MBE
1996 · J.M. Van Hove, P.P. Chow, et al. · MRS Proceedings · 11
Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In-Situ Cathodoluminescence
1997 · J. M. Van Hove, P. P. Chow, et al. · MRS Proceedings · 9
npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions
2000 · G Dang, B Luo, et al. · Solid-State Electronics · 8
GaN Electronics for High Power, High Temperature Applications
2000 · S. J. Pearton, F. Ren, et al. · The Electrochemical Society Interface · 6
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Uniformity and high temperature performance of X-band nitride power HEMTs fabricated from 2-inch epitaxy
1998 · R Hickman, J.M Van Hove, et al. · Solid-State Electronics · 6
High Temperature GaN and AlGaN Photovoltaic Detectors for UV Sensing Applications
1997 · J. M. Van Hove, P. P. Chow, et al. · MRS Proceedings · 1
AlGaN Schottky diodes for short-wavelength UV applications
2001 · Peter P. Chow, Jody J. Klaassen, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
p-GaAs Base Regrowth for GaN HBTs and BJTs
2000 · G. Dang, A.P. Zhang, et al. · MRS Proceedings
Uniformity and Performance Characterization of GaN p-i-n Photodetectors Fabricated from 3-Inch Epitaxy
1999 · R. Hickman, J. J. Klaassen, et al. · MRS Internet Journal of Nitride Semiconductor Research
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Uniformity and Performance Characterization of GaN P-I-N Photodetectors Fabricated From 3-Inch Epitaxy
1998 · R. Hickman, J. J. Klaassen, et al. · MRS Proceedings
Uniformity, High Temperature Performance And Reliability Of X-Band Nitride Power Hemts Fabricated From 2-Inch Epitaxy
1997 · R. Hickman, J. M. Van Hove, et al. · MRS Proceedings
Works count: 21
Citation count: 426
H-index: 11
I10-index: 11
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