Work

Simulation of GaN/AlGaN heterojunction bipolar transistors: part I – npn structures

Year: 2000

Type: article

Source: Solid-State Electronics

DOI: 10.1016/s0038-1101(00)00027-7

Authors: X.A Cao, J.M Van Hove, J.J Klaassen, C.J Polley, A.M Wowchak, P.P Chow, D.J King, A.P Zhang, G Dang, C Monier, S.J Pearton, F Ren

Institutions: University of Florida, SVT Associates (United States)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Office of Naval Research

OpenAlex ID: W4248338367

FWCI: 2.308

Cites: 5

Cited by: 13

Related to: 10