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Jody J. Klaassen
Observed names:
J Klaassen,
J. J. KLAASSEN,
J. J. Klaassen,
J. Klaassen,
J.J Klaassen,
J.J. Klaassen,
JJ Klaasen,
Klaassen, J.,
Klaassen, Jody J.
show all 9
Institution:
SVT Associates (United States)
Observed institutions:
National Institute of Standards and Technology,
Joint Institute for Laboratory Astrophysics,
University of Colorado Boulder,
SVT Associates (United States),
Sophia University,
North Dakota State University,
Massachusetts Institute of Technology
show all 7
OpenAlex ID:
A5029375121
Works
57
Awards
1
Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
1997
·
J. M. Van Hove
, R. Hickman
, et al.
·
Applied Physics Letters
·
176
300°C GaN/AlGaN Heterojunction Bipolar Transistor
1998
·
Fan Ren
, Cammy R. Abernathy
, et al.
·
MRS Internet Journal of Nitride Semiconductor Research
·
73
PDF
Observation of the ν1 OH(OD) stretch of HOI and DOI by Fourier transform infrared emission spectroscopy
1996
·
Jody J. Klaassen
, Jörg Lindner
, et al.
·
The Journal of Chemical Physics
·
47
A laser photolysis/time-resolved Fourier transform infrared emission study of OH(X 2Π,v) produced in the reaction of alkyl radicals with O(3P)
1998
·
Jörg Lindner
, Richard A. Loomis
, et al.
·
The Journal of Chemical Physics
·
37
State-to-state rotational energy-transfer measurements in the v2=1 state of ammonia by infrared–infrared double resonance
1992
·
Bernd Abel
, Stephen L. Coy
, et al.
·
The Journal of Chemical Physics
·
34
GaN/AlGaN HBT fabrication
2000
·
F Ren
, J Han
, et al.
·
Solid-State Electronics
·
32
Dissociative versus molecular chemisorption of nitric oxide on small bare cationic cobalt clusters in the gas phase
1988
·
J. J. Klaassen
, D. B. Jacobson
·
Journal of the American Chemical Society
·
32
Fourier transform infrared emission study of the mechanism and dynamics of HOI formed in the reaction of alkyl iodides with O(3P)
1997
·
Richard A. Loomis
, Jody J. Klaassen
, et al.
·
The Journal of Chemical Physics
·
29
GaN PN junction issues and developments
2000
·
R Hickman
, J.M Van Hove
, et al.
·
Solid-State Electronics
·
27
Determination of the atomic nitrogen flux from a radio frequency plasma nitride source for molecular beam epitaxy systems
1998
·
D. Voulot
, R. W. McCullough
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
27
Direct measurement of rotational and vibrational relaxation in methane overtone levels by time-resolved infrared double-resonance spectroscopy
1994
·
Jody J. Klaassen
, Stephen L. Coy
, et al.
·
The Journal of Chemical Physics
·
27
State-to-state rotational energy transfer measurements in methane (CHD3) by infrared double resonance with a tunable diode laser
1994
·
J. J. Klaassen
, S. L. Coy
, et al.
·
The Journal of Chemical Physics
·
19
Effect of N2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma
2000
·
A. P. Zhang
, G. T. Dang
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
18
Study of the emission characteristics of a rf plasma source for atomic oxygen: Measurements of atom, ion, and electron fluxes
2001
·
D. M. Kearns
, D. R. Gillen
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
16
High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors
2000
·
X.A Cao
, J.M Van Hove
, et al.
·
Solid-State Electronics
·
15
Characterisation of an RF atomic nitrogen plasma source
1999
·
D Voulot
, R.W McCullough
, et al.
·
Journal of Crystal Growth
·
14
Simulation of GaN/AlGaN heterojunction bipolar transistors: part I – npn structures
2000
·
X.A Cao
, J.M Van Hove
, et al.
·
Solid-State Electronics
·
13
Group III-nitride materials for ultraviolet detection applications
2000
·
Peter P. Chow
, Jody J. Klaassen
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
12
Molecular beam epitaxy grown InGaN multiple quantum well structures optimized using in situ cathodoluminescence
1998
·
J. M. Van Hove
, P. P. Chow
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
·
12
Simulation of GaN/AlGaN heterojunction bipolar transistors: part II – pnp structures
2000
·
X.A Cao
, J.M Van Hove
, et al.
·
Solid-State Electronics
·
11
Visible Blind uv GaN Photovoltaic Detector Arrays Grown by rf Atomic Nitrogen Plasma MBE
1996
·
J.M. Van Hove
, P.P. Chow
, et al.
·
MRS Proceedings
·
11
Measurement of self-broadening of the ozone v3 transitions
1991
·
C. Flannery
, J.J. Klaassen
, et al.
·
Journal of Quantitative Spectroscopy and Radiative Transfer
·
11
Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In-Situ Cathodoluminescence
1997
·
J. M. Van Hove
, P. P. Chow
, et al.
·
MRS Proceedings
·
9
npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions
2000
·
G Dang
, B Luo
, et al.
·
Solid-State Electronics
·
8
Optimization of AlGaN films grown by RF atomic nitrogen plasma using in-situ cathodoluminescence
1997
·
J.M. Van Hove
, P.P. Chow
, et al.
·
Journal of Crystal Growth
·
8
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Works count:
57
Citation count:
740
H-index:
15
I10-index:
22
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