Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
Year: 1997
Type: article
Source: Applied Physics Letters
DOI: 10.1063/1.118838
Institutions: SVT Associates (United States), University of Minnesota
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1968600102