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Saeed Jahdi

Observed names: Jahdi, Saeed, S. Jahdi
ORCID: 0000-0002-6471-0429
Observed ORCID: 0000-0002-6471-0429
OpenAlex ID: A5009021132
Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs
2019 · Jose Ortiz Gonzalez, Ruizhu Wu, et al. · IEEE Transactions on Industrial Electronics · 194
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Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules
2015 · Saeed Jahdi, Olayiwola Alatise, et al. · IEEE Transactions on Industrial Electronics · 164
An Analysis of the Switching Performance and Robustness of Power MOSFETs Body Diodes: A Technology Evaluation
2014 · Saeed Jahdi, Olayiwola Alatise, et al. · IEEE Transactions on Power Electronics · 98
The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs
2014 · Saeed Jahdi, Olayiwola Alatise, et al. · IEEE Transactions on Industrial Electronics · 76
An Evaluation of Silicon Carbide Unipolar Technologies for Electric Vehicle Drive-Trains
2014 · Saeed Jahdi, Olayiwola Alatise, et al. · IEEE Journal of Emerging and Selected Topics in Power Electronics · 75
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Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs
2014 · Petros Alexakis, Olayiwola Alatise, et al. · IEEE Transactions on Electron Devices · 72
Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery
2014 · Saeed Jahdi, Olayiwola Alatise, et al. · IEEE Transactions on Industrial Electronics · 45
Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs
2015 · Roozbeh Bonyadi, Olayiwola Alatise, et al. · IEEE Transactions on Power Electronics · 41
Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses
2023 · Renze Yu, Saeed Jahdi, et al. · IEEE Transactions on Power Electronics · 40
$\beta$-Ga 2 O 3 in Power Electronics Converters: Opportunities & Challenges
2024 · Saeed Jahdi, Akhil S. Kumar, et al. · IEEE Open Journal of Power Electronics · 35
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Comparison of Short Circuit Failure Modes in SiC Planar MOSFETs, SiC Trench MOSFETs and SiC Cascode JFETs
2021 · Erfan Bashar, Ruizhu Wu, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications · 30
Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events
2023 · Renze Yu, Saeed Jahdi, et al. · IEEE Transactions on Device and Materials Reliability · 27
Performance of Parallel Connected SiC MOSFETs under Short Circuits Conditions
2021 · Ruizhu Wu, Simon Mendy, et al. · Energies · 22
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A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability
2023 · Olayiwola Alatise, Arkadeep Deb, et al. · Energies · 21
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Comparative analysis of false turn-ON in silicon bipolar and SiC unipolar power devices
2015 · Saeed Jahdi, Olayiwola Alatise, et al. · IEEE Energy Conversion Congress and Exposition (ECCE) · 21
Grid integration of wind-solar hybrid renewables using AC/DC converters as DG power sources
2011 · Saeed Jahdi, Loi Lei Lai, et al. · World Congress on Sustainable Technologies · 21
Cryogenic Characterization of Commercial SiC Power MOSFETs
2015 · Han Chen, Peter Michael Gammon, et al. · Materials science forum · 20
Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of dI $_{\bf DS}$ /dt and Temperature
2014 · Saeed Jahdi, Olayiwola Alatise, et al. · IEEE Transactions on Power Electronics · 20
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Current Sharing of Parallel SiC MOSFETs under Short Circuit Conditions
2021 · Ruizhu Wu, Simon Mendy, et al. · European Conference on Power Electronics and Applications · 19
Investigating the reliability of SiC MOSFET body diodes using Fourier series modelling
2014 · R. Bonyadi, O. Alatise, et al. · IEEE Energy Conversion Congress and Exposition (ECCE) · 19
Prospects and Challenges of 4H-SiC Thyristors in Protection of HB-MMC-VSC-HVDC Converters
2021 · Chengjun Shen, Saeed Jahdi, et al. · IEEE Open Journal of Power Electronics · 15
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Analysis of power device failure under avalanche mode Conduction
2015 · P. Alexakis, O. Alatise, et al. · International Conference on Power Electronics and ECCE Asia (ICPE-ECCE Asia) · 15
Measurement and simulation of short circuit current sharing under parallel connection: SiC MOSFETs and SiC Cascode JFETs
2021 · R. Wu, S.N. Agbo, et al. · Microelectronics Reliability · 14
Dynamic characterization of SiC and GaN devices with BTI stresses
2019 · J. Ortiz Gonzalez, M. Hedayati, et al. · Microelectronics Reliability · 14
Analysis of the 1st and 3rd Quadrant Transients of Symmetrical and Asymmetrical Double-Trench SiC Power MOSFETs
2021 · Juefei Yang, Saeed Jahdi, et al. · IEEE Open Journal of Power Electronics · 13
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Works count: 139
Citation count: 1,405
H-index: 19
I10-index: 32
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