Get started
Author

E.Ö. Sveinbjörnsson

Observed names: E Ö Sveinbjörnsson, E. O. Sveinbjornsson, E. Sveinbjornsson, E. Sveinbjörnsson, E. Ö Sveinbjörnsson, E. Ö. Sveinbjörnsson, E. ö. Sveinbjörnsson, E.O. Sveinbjornsson, E.Ö. Sveinbjörnsson, E.Ö. Sveinbjӧrnsson, E. Ö. Sveinbjörnsson, Einar O. Sveinbjornsson, Einar O. Sveinbjörnsson, Einar Sveinbjörnsson, Einar Ö Sveinbjörnsson, Einar Ö. Sveinbjornsson, Einar Ö. SveinbjöRnsson, Einar Ö. Sveinbjörnsson, Einar �. Sveinbjornsson, EinarÖ. Sveinbjörnsson, Sveinbjörnsson, E
ORCID: 0000-0003-4474-5293
Observed ORCID: 0000-0003-4474-5293
OpenAlex ID: A5009567869
Interfaces between 4H-SiC and SiO2: Microstructure, nanochemistry, and near-interface traps
2004 · Eckhard Pippel, Jörg Woltersdorf, et al. · Journal of Applied Physics · 134
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
2010 · M. Fagerlind, F. Allerstam, et al. · Journal of Applied Physics · 105
PDF
Room temperature electroluminescence from dislocation-rich silicon
1996 · Einar Ö. Sveinbjörnsson, Jörg Weber · Applied Physics Letters · 104
Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers
2018 · Johan Bergsten, Mattias Thorsell, et al. · IEEE Transactions on Electron Devices · 87
Interface trap properties of thermally oxidized n-type 4H–SiC and 6H–SiC
2005 · T.E. Rudenko, I.N. Osiyuk, et al. · Solid-State Electronics · 85
A strong reduction in the density of near-interface traps at the SiO2∕4H-SiC interface by sodium enhanced oxidation
2007 · F. Allerstam, H. Ö. Ólafsson, et al. · Journal of Applied Physics · 79
Electrical properties of platinum-hydrogen complexes in silicon
1997 · J.-U. Sachse, E. Ö. Sveinbjörnsson, et al. · Physical review. B, Condensed matter · 77
Reaction kinetics of hydrogen-gold complexes in silicon
1995 · Einar Ö. Sveinbjörnsson, Olof Engström · Physical review. B, Condensed matter · 75
Fabrication and characterization of field-plated buried-gate SiC MESFETs
2006 · K. Andersson, M. Sudow, et al. · IEEE Electron Device Letters · 70
Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC
2018 · R. Y. Khosa, E. B. Thorsteinsson, et al. · AIP Advances · 60
PDF
1200-V 5.2-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC BJTs With a High Common-Emitter Current Gain
2007 · Hyung-Seok Lee, Martin Domeij, et al. · IEEE Electron Device Letters · 59
High field-effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material
2005 · G. Gudjonsson, H.O. Olafsson, et al. · IEEE Electron Device Letters · 57
Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation
2009 · Vinayak Tilak, Kevin Matocha, et al. · IEEE Transactions on Electron Devices · 52
Similarities in the electrical properties of transition metal–hydrogen complexes in silicon
1999 · J.-U. Sachse, E.Ö. Sveinbjörnsson, et al. · Materials Science and Engineering B · 46
Hydrogen-atom number in platinum-hydrogen complexes in silicon
1999 · J.-U. Sachse, J. Weber, et al. · Physical review. B, Condensed matter · 45
Thermal emission of electrons from selected s-shell configurations in InAs/GaAs quantum dots
2003 · O. Engström, M. Malmkvist, et al. · Applied Physics Letters · 43
Phosphorus diffusion gettering of gold in silicon: The reversibility of the gettering process
1993 · Einar Ö. Sveinbjörnsson, Olof Engström, et al. · Journal of Applied Physics · 40
Novel hydrogen-gold-related deep acceptor in n-type silicon
1992 · Einar Ö. Sveinbjörnsson, Olof Engström · Applied Physics Letters · 39
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems
2009 · M. Dammann, W. Pletschen, et al. · Microelectronics Reliability · 33
Mg-doping and free-hole properties of hot-wall MOCVD GaN
2022 · A. Papamichail, A. Kakanakova-Georgieva, et al. · Journal of Applied Physics · 32
PDF
Surface passivation oxide effects on the current gain of 4H-SiC bipolar junction transistors
2008 · H.-S. Lee, M. Domeij, et al. · Applied Physics Letters · 31
High field effect mobility in Si face 4H-SiC MOSFET transistors
2004 · H.Ö. Ólafsson, G. Gudjónsson, et al. · Electronics Letters · 31
Hydrogen passivation of gold inp-type silicon involving hydrogen-gold-related deep levels
1994 · Einar Ö. Sveinbjörnsson, Gert I. Andersson, et al. · Physical review. B, Condensed matter · 29
Donor and double-donor transitions of the carbon vacancy related EH6∕7 deep level in 4H-SiC
2016 · I. D. Booker, E. Janzén, et al. · Journal of Applied Physics · 28
Observation of interface defects in thermally oxidized SiC using positron annihilation
2003 · James Dekker, Kimmo Saarinen, et al. · Applied Physics Letters · 27
Works count: 124
Citation count: 2,065
H-index: 25
I10-index: 51
Year
Topic
Type