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Grégory Grosset
Observed names:
G Grosset,
G. Grosset,
Gregory Grosset,
Grosset, G,
Grosset, Gregory,
Grosset, Grégory
show all 6
Institution:
Ibs (France)
Observed institution:
Ibs (France)
OpenAlex ID:
A5009617842
Broadband dielectric spectroscopy of BPDA/ODA polyimide films
2013
·
R Khazaka
, M L Locatelli
, et al.
·
Journal of Physics D Applied Physics
·
42
PDF
3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Substrates and New 3C-SiС Substrates for Sustainable Wide-Band-Gap Power Devices (CHALLENGE)
2018
·
Francesco La Via
, Fabrizio Roccaforte
, et al.
·
Materials science forum
·
15
PDF
High temperature dielectric properties of SiO2 films deposited by TEOS PECVD
2016
·
Lumei Wei
, Marie-Laure Locatelli
, et al.
·
IEEE International Conference on Dielectrics (ICD)
·
2
Study of mobile ionic charges by thermally stimulated currents in 4H-SiC MOS capacitors with thick SiO2 layers
2020
·
C. Raynaud
, M.L. Locatelli
, et al.
·
Materials Science and Engineering B
·
1
High-Voltage SiC-JFET Fabrication and Full Characterization
2019
·
Besar Asllani
, Pascal Bevilacqua
, et al.
·
Materials science forum
·
1
Novel Carbon Treatment to Create an Oriented 3C-SiC Seed on Silicon
2019
·
Marcin Zielinski
, Sylvain Monnoye
, et al.
·
Materials science forum
·
1
Impact of Design on Electrical Characteristics of 3.5 kV 4H-SiC JBS Diode
2014
·
Pierre Brosselard
, Florian Chevalier
, et al.
·
Materials science forum
·
1
Design and Characterization of a Novel Dual-Gate 3.3 Kv 4H-Sic JFET
2013
·
Florian Chevalier
, P. Brosselard
, et al.
·
Materials science forum
·
1
A path toward high voltage devices : 3.3 kV 4H-SiC JBS and JFET
2012
·
Chevalier, F
, Grosset, G
, et al.
·
HAL
·
1
PDF
Locally Ion Implantation and Annealing Effects in Diamond
2023
·
Bouras, Mohamed
, Gourad, Raid
, et al.
·
HAL
Locally Ion Implantation and Annealing Effects in Diamond
2022
·
Bouras, Mohamed
, Gourad, Raid
, et al.
·
HAL
PDF
Ohmic contacts by phosphorous ion implantation on (111) N-type CVD Diamond
2021
·
Fontaine, Lya
, Isoird, Karine
, et al.
·
HAL
Mécanismes de claquage de diodes bipolaires en SiC - Impact du milieu isolant en surface
2016
·
Wei, Lumei
, Locatelli, Marie-Laure
, et al.
·
HAL
PDF
FilSiC – De l'épitaxie au module de puissance
2016
·
Cussac, Philippe
, Duchesne, Cyrille
, et al.
·
HAL
PDF
FilSiC – From the epi layer to the chip
2015
·
Grégory Grosset
, Laurent Roux
, et al.
Propriétés diélectriques à haute température de couches de SiO2 déposées par PECVD TEOS
2014
·
Wei, Lumei
, Locatelli, Marie-Laure
, et al.
·
HAL
Quality of the ohmic contact on 4H-SiC p + area and its impact on direct conduction and voltage capability
2013
·
Chevalier, Florian
, Brosselard, Pierre
, et al.
·
HAL
PDF
A complete methodology for determining the influence of the design for 3.3 kV silicon carbide diodes : JBS compared to Schottky
2013
·
Chevalier, Florian
, Brosselard, Pierre
, et al.
·
HAL
PDF
Design and characterization of a novel 3.3 kV 4H-SiC JFET
2012
·
Chevalier, Florian
, Brosselard, Pierre
, et al.
·
HAL
PDF
Protections périphériques des composants 1200 V
2012
·
Chevalier, Florian
, Brosselard, Pierre
, et al.
·
HAL
PDF
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Works count:
21
Citation count:
65
H-index:
2
I10-index:
2
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