Author

Galia Pozina

Observed names: G Pozina, G R Pozina, G. Pozina, G. R. Pozina, G.P. Pozina, G.R Pozina, G.R. Pozina, Galia Pozina (9190481), Galina R. Pozina, Gallia Pozina, Pozina, Galia, Г. Позина

Institution: Linköping University

Observed institutions: Linköping University, Japan Atomic Energy Agency, Russian Academy of Sciences, Philipps University of Marburg, ITMO University, University of Würzburg, University of Florida, Norstel (Sweden), Furukawa Co., Ltd. (Japan), Trường Đại học Khoa học và Công nghệ Hà Nội, Academy of Sciences of the Soviet Union, Hanoi University of Science and Technology, Ioffe Institute, Meijo University

ORCID: 0000-0002-9840-7364

Observed ORCID: 0000-0002-9840-7364

OpenAlex ID: A5010031194

Design rules for minimizing voltage losses in high-efficiency organic solar cells

2018 · Deping Qian, Zilong Zheng, et al. · Nature Materials · 986

Synthesis of ZnO nanoparticles by co-precipitation method for solar driven photodegradation of Congo red dye at different pH

2018 · Rania E. Adam, Gallia Pozina, et al. · Photonics and Nanostructures - Fundamentals and Applications · 325

Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy

1999 · I. A. Buyanova, W. M. Chen, et al. · Applied Physics Letters · 260

Perovskite-molecule composite thin films for efficient and stable light-emitting diodes

2020 · Heyong Wang, Felix Utama Kosasih, et al. · Nature Communications · 142

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Evidence for Two Mg Related Acceptors in GaN

2009 · B. Monemar, P. P. Paskov, et al. · Physical Review Letters · 131

Group III-nitride based hetero and quantum structures

2000 · B Monemar, G Pozina · Progress in Quantum Electronics · 115

Growth and excitonic properties of single fractional monolayer CdSe/ZnSe structures

1998 · S. V. Ivanov, A. A. Toropov, et al. · Journal of Applied Physics · 105

Mechanism for rapid thermal annealing improvements in undoped GaNxAs1−x/GaAs structures grown by molecular beam epitaxy

2000 · I. A. Buyanova, G. Pozina, et al. · Applied Physics Letters · 102

Synthesis of Mg-doped ZnO NPs via a chemical low-temperature method and investigation of the efficient photocatalytic activity for the degradation of dyes under solar light

2019 · Rania E. Adam, Hatim Alnoor, et al. · Solid State Sciences · 99

Time-resolved studies of photoluminescence in GaNxP1−x alloys: Evidence for indirect-direct band gap crossover

2002 · I. A. Buyanova, G. Pozina, et al. · Applied Physics Letters · 87

Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers

2009 · G.J. Riedel, J.W. Pomeroy, et al. · IEEE Electron Device Letters · 86

Properties of molecular-beam epitaxy-grown GaNAs from optical spectroscopy

1998 · G. Pozina, I. Ivanov, et al. · Journal of Applied Physics · 84

SiC Crystal Growth by HTCVD

2004 · Alexsandre Ellison, Björn Magnusson, et al. · Materials science forum · 65

Properties of the main Mg-related acceptors in GaN from optical and structural studies

2014 · B. Monemar, P. P. Paskov, et al. · Journal of Applied Physics · 61

Type I band alignment in the GaNxAs1−x/GaAs quantum wells

2000 · I. A. Buyanova, G. Pozina, et al. · Physical review. B, Condensed matter · 61

Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells

2000 · G. Pozina, J. P. Bergman, et al. · Journal of Applied Physics · 61

Enhancement of spontaneous emission in Tamm plasmon structures

2017 · A. R. Gubaydullin, C. Symonds, et al. · Scientific Reports · 58

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Emission properties of Ga2O3 nano-flakes: effect of excitation density

2017 · G. Pozina, M. Forsberg, et al. · Scientific Reports · 54

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Effect of silicon and oxygen doping on donor bound excitons in bulk GaN

2011 · G. Pozina, S. Khromov, et al. · Physical Review B · 51

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Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy

1999 · G. Pozina, J. P. Bergman, et al. · Applied Physics Letters · 50

Phase transformation in κ- and γ-Al2O3 coatings on cutting tool inserts

2009 · D.H. Trinh, K. Back, et al. · Surface and Coatings Technology · 49

Dependence of Resonance Energy Transfer on Exciton Dimensionality

2011 · Jan Junis Rindermann, Galia Pozina, et al. · Physical Review Letters · 48

Investigation of deep levels in bulk GaN material grown by halide vapor phase epitaxy

2013 · Tran Thien Duc, Galia Pozina, et al. · Journal of Applied Physics · 46

Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor

2020 · Galia Pozina, Chih-Wei Hsu, et al. · Scientific Reports · 45

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2015 · Galia Pozina, Rafal Ciechonski, et al. · Applied Physics Letters · 45

Works count: 269

Citation count: 5,392

H-index: 36

I10-index: 105