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Author

Kengo Nagata

Observed name: K. Nagata
ORCID: 0000-0002-1281-0372
Observed ORCID: 0000-0002-1281-0372
OpenAlex ID: A5010521919
Low resistivity of highly Si-doped n-type Al0.62Ga0.38N layer by suppressing self-compensation
2019 · Kengo Nagata, Hiroaki Makino, et al. · Applied Physics Express · 43
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Efficiency improvement of AlGaN-based deep-ultraviolet light-emitting diodes and their virus inactivation application
2021 · Yoshiki Saito, Satoshi Wada, et al. · Japanese Journal of Applied Physics · 41
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Growth of GaN and AlGaN on (100) β‐Ga2O3 substrates
2012 · Shun Ito, Kenichiro Takeda, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 37
Operation-induced degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes fabricated on a sapphire substrate
2023 · S. F. Chichibu, K. Nagata, et al. · Applied Physics Letters · 22
Reduction in operating voltage of AlGaN homojunction tunnel junction deep-UV light-emitting diodes by controlling impurity concentrations
2021 · Kengo Nagata, Hiroaki Makino, et al. · Applied Physics Express · 22
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Electronic degeneracy conduction in highly Si-doped Al0.6Ga0.4N layers based on the carrier compensation effect
2020 · Keita Kataoka, Tetsuo Narita, et al. · Applied Physics Letters · 22
Injection efficiency in AlGaN‐based UV laser diodes
2011 · Kengo Nagata, Kenichiro Takeda, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 22
Origin of optical absorption in AlN with air voids
2019 · Kengo Nagata, Hiroaki Makino, et al. · Japanese Journal of Applied Physics · 18
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A Review on the Progress of AlGaN Tunnel Homojunction Deep-Ultraviolet Light-Emitting Diodes
2023 · Kengo Nagata, Taichi Matsubara, et al. · Crystals · 17
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Comprehensive Study of Electron Conduction and Its Compensation for Degenerate Si‐Doped AlN‐Rich AlGaN
2023 · Keita Kataoka, Tetsuo Narita, et al. · physica status solidi (RRL) - Rapid Research Letters · 16
Reduction in threshold current density of 355 nm UV laser diodes
2011 · Kengo Nagata, Kenichiro Takeda, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 16
Sputtered polycrystalline MgZnO/Al reflective electrodes for enhanced light emission in AlGaN-based homojunction tunnel junction DUV-LED
2022 · Taichi Matsubara, Kengo Nagata, et al. · Applied Physics Express · 14
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Structural design optimization of 279 nm wavelength AlGaN homojunction tunnel junction deep-UV light-emitting diode
2022 · Kengo Nagata, Satoshi Anada, et al. · Applied Physics Express · 13
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Formation mechanism and suppression of Ga-rich streaks at macro-step edges in the growth of AlGaN on an AlN/sapphire-template
2019 · Keita Kataoka, Tetsuo Narita, et al. · Journal of Crystal Growth · 10
Visualization of depletion layer in AlGaN homojunction p–n junction
2022 · Kengo Nagata, Satoshi Anada, et al. · Applied Physics Express · 7
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Transparent electrode for UV light‐emitting‐diodes
2011 · Kosuke Takehara, Kenichiro Takeda, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 7
Growth of low‐dislocation‐density AlGaN using Mg‐doped AlN underlying layer
2010 · T. Asai, K. Nonaka, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 6
Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer
2010 · Kenichiro Takeda, Kengo Nagata, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4
High‐output‐power AlGaN/GaN ultraviolet‐light‐emitting diodes by activation of Mg‐doped p‐type AlGaN in oxygen ambient
2010 · Kengo Nagata, Tomoki Ichikawa, et al. · physica status solidi (a) · 3
Development in AlGaN homojunction tunnel junction deep UV LEDs
2023 · Kengo Nagata, Satoshi Anada, et al. · Light-Emitting Devices, Materials, and Applications · 1
Reduction in operating voltage of UV laser diode
2010 · Tomoki Ichikawa, Kenichiro Takeda, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Activation of Mg-Doped p-Type Al0.17Ga0.83N in Oxygen Ambient
2009 · Kengo Nagata, Kenichiro Takeda, et al. · Japanese Journal of Applied Physics · 1
Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes
2023 · Kengo Nagata, Taichi Matsubara, et al. · Preprints.org
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Improvement of Algan Homoepitaxial Tunnel Junction Deep-UV Light-Emitting Diodes by Controlling the Growth of N-Type Algan and Polycrystalline Mgzno/Al Electrodes
2023 · Kengo Nagata, Taichi Matsubara, et al. · Preprints.org
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Interference effect in deep-ultraviolet light emitting diodes with p-AlGaN contact layers and ITO/Al electrodes
2022 · Rie Iwatsuki, Hisanori Ishiguro, et al. · IEEE International Semiconductor Laser Conference (ISLC)
Works count: 34
Citation count: 343
H-index: 13
I10-index: 14
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