Work

Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer

Year: 2010

Type: article

Source: Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

DOI: 10.1002/pssc.201000588

Authors: Kenichiro Takeda, Kengo Nagata, Tomoki Ichikawa, Kentaro Nonaka, Yuji Ogiso, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan

Institutions: Meijo University, Nagoya University, Hamamatsu Photonics (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Japan Society for the Promotion of Science

OpenAlex ID: W2043796133

FWCI:

Cites:

Cited by: 4

Related to: 10