Author

Kentaro Nonaka

Observed name: K. Nonaka

Observed institutions: NGK Insulators (Japan), Meijo University

OpenAlex ID: A5033802001

Strain Relaxation Mechanisms in AlGaN Epitaxy on AlN Templates

2010 · Zhihao Wu, Kentaro Nonaka, et al. · Applied Physics Express · 29

Crystal growth and p‐type conductivity control of AlGaN for high‐efficiency nitride‐based UV emitters

2009 · T. Mori, K. Nagamatsu, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 21

Internal quantum efficiency of GaN/AlGaN‐based multi quantum wells on different dislocation densities underlying layers

2010 · Kenichiro Takeda, Fumiaki Mori, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 19

Reduction in threshold current density of 355 nm UV laser diodes

2011 · Kengo Nagata, Kenichiro Takeda, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 16

Microstructures of GaInN/GaInN Superlattices on GaN Substrates

2010 · Toru Sugiyama, Yosuke Kuwahara, et al. · Applied Physics Express · 10

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Growth of low‐dislocation‐density AlGaN using Mg‐doped AlN underlying layer

2010 · T. Asai, K. Nonaka, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 6

Microwave Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistor on Semi‐Insulating Mn‐Doped GaN Substrate

2024 · Tomoharu Sugino, Kenji Osaki, et al. · physica status solidi (a) · 4

Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer

2010 · Kenichiro Takeda, Kengo Nagata, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4

Defects in highly Mg‐doped AlN

2010 · Kentaro Nonaka, Toshiaki Asai, et al. · physica status solidi (a) · 3

Microstructural analysis of thick AlGaN epilayers using Mg‐doped AlN underlying layer

2011 · K. Nonaka, T. Asai, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2

First Demonstration of Watt-Class Output Power at 2.4 GHz of AlGaN/GaN HEMTs on Semi-Insulating Mn-Doped GaN Substrates

2024 · Tomoharu Sugino, Akio Wakejima, et al. · Asia-Pacific Microwave Conference (APMC) · 1

Epitaxial growth and characterization of AlGaN/GaN HEMT structures on 4 inch directly bonded GaN/SiC substrates

2026 · Kentaro Nonaka, Ryozo Kishimoto, et al. · Japanese Journal of Applied Physics

GaN Vertical p-n Junction Diode on GaN Substrate Grown by Na-Flux Method with Avalanche Capability and Demonstration of 100 A (pulsed) Operation

2023 · Seiya Kawasaki, Hirotaka Watanabe, et al. · International Conference on Solid State Devices and Materials (SSDM)

IQE and EQE of the nitride-based UV/DUV LEDs

2011 · H. Amano, G.J. Park, et al.

Works count: 14

Citation count: 115

H-index: 6

I10-index: 5