Get started
Author

Pragya Kushwaha

Observed name: P. Kushwaha
Observed institutions: Indian Space Research Organisation, Indian Institute of Technology Jodhpur, Space Applications Centre, Panjab University, Indian Institute of Technology Kanpur, University of California, Berkeley
ORCID: 0000-0003-3759-6066
Observed ORCIDs: 0000-0003-3759-6066, 0000-0003-2947-4923
OpenAlex ID: A5011420590
BSIM-CMG: Standard FinFET compact model for advanced circuit design
2015 · Juan P. Duarte, Sourabh Khandelwal, et al. · European Solid-State Circuits Conference (ESSCIRC) · 118
Compact Modeling of Temperature Effects in FDSOI and FinFET Devices Down to Cryogenic Temperatures
2021 · Girish Pahwa, Pragya Kushwaha, et al. · IEEE Transactions on Electron Devices · 115
Engineering Negative Differential Resistance in NCFETs for Analog Applications
2018 · Harshit Agarwal, Pragya Kushwaha, et al. · IEEE Transactions on Electron Devices · 108
Proposal for Capacitance Matching in Negative Capacitance Field-Effect Transistors
2019 · Harshit Agarwal, Pragya Kushwaha, et al. · IEEE Electron Device Letters · 97
BSIM Compact Model of Quantum Confinement in Advanced Nanosheet FETs
2020 · Avirup Dasgupta, Shivendra Singh Parihar, et al. · IEEE Transactions on Electron Devices · 70
Design Optimization Techniques in Nanosheet Transistor for RF Applications
2020 · Pragya Kushwaha, Avirup Dasgupta, et al. · IEEE Transactions on Electron Devices · 58
Analysis and Modeling of Inner Fringing Field Effect on Negative Capacitance FinFETs
2019 · Yen-Kai Lin, Harshit Agarwal, et al. · IEEE Transactions on Electron Devices · 47
Spacer Engineering in Negative Capacitance FinFETs
2019 · Yen-Kai Lin, Harshit Agarwal, et al. · IEEE Electron Device Letters · 46
Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology Node
2019 · Pragya Kushwaha, Harshit Agarwal, et al. · IEEE Electron Device Letters · 46
NCFET Design Considering Maximum Interface Electric Field
2018 · Harshit Agarwal, Pragya Kushwaha, et al. · IEEE Electron Device Letters · 44
Modeling of GaN-Based Normally-Off FinFET
2014 · Chandan Yadav, Pragya Kushwaha, et al. · IEEE Electron Device Letters · 41
Compact Model for Geometry Dependent Mobility in Nanosheet FETs
2020 · Avirup Dasgupta, Shivendra Singh Parihar, et al. · IEEE Electron Device Letters · 38
Electrical Characterization and Modeling of GaN HEMTs at Cryogenic Temperatures
2022 · Mohammad Sajid Nazir, Pragya Kushwaha, et al. · IEEE Transactions on Electron Devices · 37
BSIM-HV: High-Voltage MOSFET Model Including Quasi-Saturation and Self-Heating Effect
2019 · H. Agarwal, C. Gupta, et al. · IEEE Transactions on Electron Devices · 37
RF Modeling of FDSOI Transistors Using Industry Standard BSIM-IMG Model
2016 · Pragya Kushwaha, Sourabh Khandelwal, et al. · IEEE Transactions on Microwave Theory and Techniques · 37
Variation Caused by Spatial Distribution of Dielectric and Ferroelectric Grains in a Negative Capacitance Field-Effect Transistor
2018 · Ming-Yen Kao, Angada B. Sachid, et al. · IEEE Transactions on Electron Devices · 36
Designing 0.5 V 5-nm HP and 0.23 V 5-nm LP NC-FinFETs With Improved ${I}_{ \mathrm{\scriptscriptstyle OFF}}$ Sensitivity in Presence of Parasitic Capacitance
2018 · Harshit Agarwal, Pragya Kushwaha, et al. · IEEE Transactions on Electron Devices · 36
Modeling the impact of substrate depletion in FDSOI MOSFETs
2014 · Pragya Kushwaha, Navid Paydavosi, et al. · Solid-State Electronics · 30
Recent enhancements in BSIM6 bulk MOSFET model
2013 · H. Agarwal, S. Venugopalan, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 29
Analytical Modeling and Experimental Validation of Threshold Voltage in BSIM6 MOSFET Model
2015 · Harshit Agarwal, Chetan Gupta, et al. · IEEE Journal of the Electron Devices Society · 27
PDF
Optimization of NCFET by Matching Dielectric and Ferroelectric Nonuniformly Along the Channel
2019 · Ming-Yen Kao, Yen-Kai Lin, et al. · IEEE Electron Device Letters · 25
BSIM compact MOSFET models for SPICE simulation
2013 · Yogesh Singh Chauhan, Sriram Venugopalan, et al. · International Conference Mixed Design of Integrated Circuits and Systems · 25
Modeling of Advanced RF Bulk FinFETs
2018 · P. Kushwaha, H. Agarwal, et al. · IEEE Electron Device Letters · 24
Compact Modeling Source-to-Drain Tunneling in Sub-10-nm GAA FinFET With Industry Standard Model
2017 · Yen-Kai Lin, Juan Pablo Duarte, et al. · IEEE Transactions on Electron Devices · 21
Thermal resistance modeling in FDSOI transistors with industry standard model BSIM-IMG
2016 · Pragya Kushwaha, K. Bala Krishna, et al. · Microelectronics Journal · 21
Works count: 76
Citation count: 1,521
H-index: 23
I10-index: 37
Year
Topic
Type