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Author

Yangyang Wu

ORCID: 0009-0003-0585-4523
Observed ORCID: 0009-0003-0585-4523
OpenAlex ID: A5011785706
Effect of temperature on the high-rate pulse charging of lithium-ion batteries
2022 · Yangyang Wu, Xinlin Long, et al. · Journal of Electroanalytical Chemistry · 27
Design and Fabrication of a Novel 1200 V 4H-SiC Trench MOSFET With Periodically Grounded Trench Bottom Shielding
2025 · Jun Yuan, Wei Chen, et al. · IEEE Transactions on Electron Devices · 11
Investigation and fabrication of the 1200 V 4H-SiC trench MOSFET with double p-type shielding regions and multiple current spreading layers
2025 · Wei Chen, Fei Guo, et al. · Journal of Physics Conference Series · 1
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A Bottom Charge-Modulated Field Limiting Rings Termination With N-P-N Sandwich Epitaxial Wafers for 4H-SiC Devices
2025 · Jun Yuan, Zhijie Cheng, et al. · IEEE Electron Device Letters · 1
Demonstration of 650 V SiC Semi-Superjuncion Trench Gate MOSFET Based on Channeling Implantation and Epitaxial Process
2026 · Yangyang Wu, Wei Chen, et al. · International Conference on Electronics, Circuits and Information Engineering (ECIE)
Characterization of 1350V-0.83mΩ·cm 2 SiC Semi-Super Junction SBD Based on Multi-step Trench
2025 · Yangyang Wu, Kuan Wang, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
Demonstration of a novel double shielding and current spreading SiC trench MOSFET with high robustness
2025 · Wei Chen, Jun Yuan, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
Design and Demonstration of a Novel SiC Trench MOSFET with Periodically Grounded P Shield Island Based on Secondary Epitaxy Process
2025 · Yangyang Wu, Fei Guo, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Design and fabrication of a SiC trench MOSFET with multi-step p-type shielding and multiple CSL layers
2025 · Wei Chen, Fei Guo, et al. · IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Works count: 9
Citation count: 40
H-index: 2
I10-index: 2
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