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Yoshiaki Daigo

Observed names: Y. Daigo, 醍醐 佳明, 醍醐, 佳明
ORCID: 0000-0003-1839-5840
Observed ORCID: 0000-0003-1839-5840
OpenAlex ID: A5012914326
Synthesis of epitaxial GaN single-crystalline film by ultra high vacuum r.f. magnetron sputtering method
2005 · Yoshiaki Daigo, Nobuki Mutsukura · Thin Solid Films · 23
Initial growth control of GaN on Si with physical-vapor-deposition-AlN seed layer for high-quality GaN templates
2016 · Hongbo Wang, Hassanet Sodabanlu, et al. · Applied Physics Express · 18
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Impacts of surface C/Si ratio on in-wafer uniformity and defect density of 4H-SiC homo-epitaxial films grown by high-speed wafer rotation vertical CVD
2019 · Yoshiaki Daigo, Shigeaki Ishii, et al. · Japanese Journal of Applied Physics · 16
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Structures and luminescence properties of polymer-like a-CNx:H films
2004 · Yoshiaki Daigo, Nobuki Mutsukura · Diamond and Related Materials · 15
Influence and Suppression of Harmful Effects Due to By-Product in CVD Reactor for 4H-SiC Epitaxy
2021 · Yoshiaki Daigo, Toru Watanabe, et al. · IEEE Transactions on Semiconductor Manufacturing · 14
High In-Wafer Uniformity of Growth Rate and Carrier Concentration on n-Type 4H-SiC Epitaxial Films Achieved by High Speed Wafer Rotation Vertical CVD Tool
2018 · Yoshiaki Daigo, Akio Ishiguro, et al. · Materials science forum · 13
Reduction of Surface and PL Defects on n-Type 4H-SiC Epitaxial Films Grown Using a High Speed Wafer Rotation Vertical CVD Tool
2018 · Yoshiaki Daigo, Akio Ishiguro, et al. · Materials science forum · 9
Effect of ion-bombardment on the deposition of a-CNx:H films in CH4/N2 r.f. plasma
2003 · Nobuki Mutsukura, Yoshiaki Daigo · Diamond and Related Materials · 9
First-principles and thermodynamic analysis for gas phase reactions and structures of the SiC(0001) surface under conventional CVD and Halide CVD environments
2021 · Kenta Chokawa, Yoshiaki Daigo, et al. · Japanese Journal of Applied Physics · 7
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Effect of initial growth on the quality of GaN on patterned sapphire substrate with ex situ physical vapor deposition AlN seed layer
2016 · Hongbo Wang, Yoshiaki Daigo, et al. · Japanese Journal of Applied Physics · 7
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Structure and reduction of large bumps formed on 4H-SiC epitaxial film originated from dislocations in substrate
2021 · Yoshiaki Daigo, Akio Ishiguro, et al. · Journal of Crystal Growth · 6
Continuous Growth of Buffer/Drift Epitaxial Stack Based on 4H-SiC by Quick Change of N2 Flow Rate under High Growth Rate Condition
2019 · Yoshiaki Daigo, Akio Ishiguro, et al. · Materials science forum · 6
Improved luminescence from InGaN/GaN MQWs by reducing initial nucleation density using sputtered AlN on sapphire substrate
2017 · Hongbo Wang, Hassanet Sodabanlu, et al. · Journal of Crystal Growth · 6
Design of a Silicon Carbide Chemical Vapor Deposition Reactor Cleaning Process Using Chlorine Trifluoride Gas Accounting for Exothermic Reaction Heat
2020 · Masaya Hayashi, Takumi Mamyouda, et al. · ECS Journal of Solid State Science and Technology · 4
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Observation and Suppression of Growth Pits Formed on 4H-SiC Epitaxial Films Grown Using Halide Chemical Vapor Deposition Process
2024 · Yoshiaki Daigo, Keisuke Kurashima, et al. · IEEE Transactions on Semiconductor Manufacturing · 3
Repeatability of Epitaxial Growth of n-Type 4H-SiC Films by High Speed Wafer Rotation Vertical CVD Tool
2019 · Yoshiaki Daigo, Akio Ishiguro, et al. · Materials science forum · 2
Lowest Concentration of Chlorine Trifluoride Gas for Cleaning Silicon Carbide Chemical Vapor Deposition Reactor
2022 · Yuika Takizawa, Masaya Hayashi, et al. · ECS Journal of Solid State Science and Technology · 1
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Influence of residual dopants to net doping concentration in N-type 4H-SiC films grown using high-speed wafer rotation vertical CVD method
2022 · Yoshiaki Daigo, Yuya Takada, et al. · Japanese Journal of Applied Physics · 1
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Recovery Method of Pyrolytic Carbon Surface after Exposure to Chlorine Trifluoride Gas
2021 · Masaya Hayashi, Keisuke Kurashima, et al. · Advances in Chemical Engineering and Science · 1
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Reduction of harmful effect due to by-product in CVD reactor for 4H-SiC epitaxy
2020 · Yoshiaki Daigo, Toru Watanabe, et al. · IEEE International Symposium on Semiconductor Manufacturing conference proceedings · 1
Impact of precise temperature control for 4H-SiC epitaxy on large diameter wafers
2020 · Yoshiaki Daigo, Toru Watanabe, et al. · IEEE International Symposium on Semiconductor Manufacturing conference proceedings · 1
Improvement of Repeatability on N-Type 4H-SiC Epitaxial Growth by High Speed Wafer Rotation Vertical CVD Tool
2020 · Yoshiaki Daigo, Akio Ishiguro, et al. · Materials science forum · 1
Achievement of Low Carrier Concentration of High-Uniformity SiC Films Grown by High Speed Wafer Rotation Vertical CVD Tool
2020 · Yoshiaki Daigo, Akio Ishiguro, et al. · Materials science forum · 1
Origin of Large Bumps Abnormally Grown on 4H-SiC Epitaxial Film by Adding HCl Gas with High Cl/Si Ratio in CVD Process
2020 · Yoshiaki Daigo, Akio Ishiguro · Materials science forum · 1
Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate
2022 · M. Nishizawa, T. Hoshii, et al. · Japanese Journal of Applied Physics
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Works count: 34
Citation count: 166
H-index: 8
I10-index: 6
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