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Anjan Chakravorty
Observed names:
A Chakravorty,
A. Chakravorty,
Anjan Chakaravorty,
Chakravorty, Anjan
Institution:
Indian Institute of Technology Madras
Observed institutions:
Indian Institute of Technology Kharagpur,
Technion – Israel Institute of Technology,
Indian Institute of Technology Madras,
Technische Universität Dresden,
Sri Sivasubramaniya Nadar College of Engineering,
Indian Institute of Technology Kanpur
show all 6
ORCID:
0000-0002-5253-8975
Observed ORCID:
0000-0002-5253-8975
OpenAlex ID:
A5013987317
Compact Hierarchical Bipolar Transistor Modeling With HiCUM
2010
·
Michael Schröter
, Anjan Chakravorty
·
International series on advances in solid state electronics and technology
·
120
Compact Hierarchical Bipolar Transistor Modeling with Hicum
2010
·
Michael Schröter
, Anjan Chakravorty
·
International series on advances in solid state electronics and technology
·
94
Analytical Model of Subthreshold Current and Slope for Asymmetric 4-T and 3-T Double-Gate MOSFETs
2008
·
Aritra Dey
, Anjan Chakravorty
, et al.
·
IEEE Transactions on Electron Devices
·
85
A Scalable, Broadband, and Physics-Based Model for On-Chip Rectangular Spiral Inductors
2019
·
Sathya Sree Jayaraman
, Venkata Vanukuru
, et al.
·
IEEE Transactions on Magnetics
·
23
Modeling of SOI-LDMOS Transistor Including Impact Ionization, Snapback, and Self-Heating
2011
·
Ujwal Radhakrishna
, Amitava DasGupta
, et al.
·
IEEE Transactions on Electron Devices
·
23
Reliability of high-speed SiGe:C HBT under electrical stress close to the SOA limit
2015
·
T. Jacquet
, G. Sasso
, et al.
·
Microelectronics Reliability
·
21
High-Q Characteristics of Variable Width Inductors With Reverse Excitation
2014
·
Venkata Narayana Rao Vanukuru
, Anjan Chakravorty
·
IEEE Transactions on Electron Devices
·
21
Compact Modeling of Static and Transient Effects of Buffer Traps in GaN HEMTs
2022
·
Ajay Shanbhag
, M. P. Sruthi
, et al.
·
IEEE Transactions on Electron Devices
·
20
Accurate Modeling of Thermal Resistance for On-Wafer SiGe HBTs Using Average Thermal Conductivity
2017
·
Suresh Balanethiram
, Anjan Chakravorty
, et al.
·
IEEE Transactions on Electron Devices
·
20
Analytic Estimation of Thermal Resistance in HBTs
2016
·
Anjan Chakravorty
, Rosario D'Esposito
, et al.
·
IEEE Transactions on Electron Devices
·
20
Compact Modeling of Proximity Effect in High- ${Q}$ Tapered Spiral Inductors
2018
·
J. Sathyasree
, Venkata Vanukuru
, et al.
·
IEEE Electron Device Letters
·
19
Analysis of High-Frequency Measurement of Transistors Along With Electromagnetic and SPICE Cosimulation
2020
·
Sebastien Fregonese
, Marco Cabbia
, et al.
·
IEEE Transactions on Electron Devices
·
18
Low-Frequency Noise in Advanced SiGe:C HBTs—Part I: Analysis
2016
·
Chhandak Mukherjee
, Thomas Jacquet
, et al.
·
IEEE Transactions on Electron Devices
·
18
A Substrate Model for On-Chip Tapered Spiral Inductors With Forward and Reverse Excitations
2018
·
J. Sathyasree
, Venkata Vanukuru
, et al.
·
IEEE Transactions on Electron Devices
·
17
Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition
2015
·
A.D.D. Dwivedi
, Anjan Chakravorty
, et al.
·
Solid-State Electronics
·
17
Design of Novel High- \(Q\) Multipath Parallel-Stacked Inductor
2014
·
Venkata Narayana Rao Vanukuru
, Anjan Chakravorty
·
IEEE Transactions on Electron Devices
·
17
Integrated layout optimized high-g inductors on high-resistivity SOI substrates for RF front-end modules
2014
·
Venkata Narayana Rao Vanukuru
, Anjan Chakravorty
·
International Conference on Signal Processing and Communications (SPCOM)
·
17
SOI-LDMOS Transistors With Optimized Partial n+ Buried Layer for Improved Performance in Power Amplifier Applications
2018
·
KrishnanNadar Savithry Nikhil
, Nandita DasGupta
, et al.
·
IEEE Transactions on Electron Devices
·
16
Series Stacked Multipath Inductor With High Self Resonant Frequency
2015
·
Venkata Narayana Rao Vanukuru
, Anjan Chakravorty
·
IEEE Transactions on Electron Devices
·
15
Analysis and Modeling of the Snapback Voltage for Varying Buried Oxide Thickness in SOI-LDMOS Transistors
2016
·
KrishnanNadar Savithry Nikhil
, Nandita DasGupta
, et al.
·
IEEE Transactions on Electron Devices
·
14
Design and modeling of high-Q variable width and spacing, planar and 3-D stacked spiral inductors
2014
·
R. R. Manikandan
, Venkata Narayana Rao Vanukuru
, et al.
·
International Symposium on VLSI Design and Test (VDAT)
·
13
Compact Modeling of High Frequency Correlated Noise in HBTs
2006
·
P. Sakalas
, J. Herricht
, et al.
·
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
·
13
Extraction of Compact Static Thermal Model Parameters for SiGe HBTs
2021
·
Zoltan Huszka
, K. Nidhin
, et al.
·
IEEE Transactions on Electron Devices
·
12
TCAD and EM co-simulation method to verify SiGe HBT measurements up to 500 GHz
2020
·
Soumya Ranjan Panda
, Sebastien Fregonese
, et al.
·
Solid-State Electronics
·
12
Extraction of BEOL Contributions for Thermal Resistance in SiGe HBTs
2017
·
Suresh Balanethiram
, Rosario D'Esposito
, et al.
·
IEEE Transactions on Electron Devices
·
12
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Works count:
148
Citation count:
1,056
H-index:
17
I10-index:
31
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