Author

Ranjit S. Mand

Observed names: MAND, RANJIT S., R. S. Mand, R.S. Mand

Observed institutions: AT&T (United States), Toshiba (Japan), Bell (Canada), University of Toronto, Furukawa Electric (Japan), Furukawa Co., Ltd. (Japan)

OpenAlex ID: A5014218185

A new double-heterostructure optoelectronic switching device using molecular-beam epitaxy

1986 · G. W. Taylor, J. G. Simmons, et al. · Journal of Applied Physics · 130

Beam instability in 980-nm power lasers: experiment and analysis

1994 · J. Guthrie, G.L. Tan, et al. · IEEE Photonics Technology Letters · 54

Optically induced switching in a p-channel double heterostructure optoelectronic switch

1986 · G. W. Taylor, R. S. Mand, et al. · Applied Physics Letters · 47

Ledistor—a three-terminal double heterostructure optoelectronic switch

1987 · G. W. Taylor, R. S. Mand, et al. · Applied Physics Letters · 46

Self-consistent modeling of beam instabilities in 980-nm fiber pump-lasers

1997 · Gen-Lin Tan, R.S. Mand, et al. · IEEE Journal of Quantum Electronics · 27

Ultra-high differential gain in GaInAs-AlGaInAs quantum wells: experiment and modeling

1995 · M.L. Xu, G.L. Tan, et al. · IEEE Photonics Technology Letters · 18

Experimental realization of an n-channel double heterostructure optoelectronic switch

1986 · G. W. Taylor, R. S. Mand, et al. · Applied Physics Letters · 17

New double heterostructure optoelectronic triangular barrier switch (OETBS)

1986 · R.S. Mand, Y. Ashizawa, et al. · Electronics Letters · 14

Optical and electrical oscillations in double-heterojunction negative differential resistance devices

1993 · S.J. Kovacic, J.J. Ojha, et al. · IEEE Transactions on Electron Devices · 13

High performance of induced-channel heterojunction field-effect transistor (HFET)

1989 · R.S. Mand, S. Eicher, et al. · Electronics Letters · 12

Electrical switching speed of the double-heterostructure optoelectronic switch

1987 · G.W. Taylor, J.G. Simmons, et al. · IEEE Transactions on Electron Devices · 9

A quantum gate current model

1993 · E.B. Abbott, M. Lee, et al. · IEEE Transactions on Electron Devices · 7

Realization of an n-channel GaAs/AlGaAs bistable transistor (BISFET)

1993 · J.J. Ojha, J.G. Simmons, et al. · IEEE Electron Device Letters · 3

Valley current density activation energy and effective longitudinal optical phonon energy in triple well asymmetric resonant tunneling diode

1990 · C. R. Bolognesi, R. S. Mand, et al. · Applied Physics Letters · 3

Dynamic switch logic — A new concept for digital optical logic using DOES devices

1985 · G.W. Taylor, J.G. Simmons, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3

The bistable field effect transistor (BISFET): a novel optoelectronic switching device

2002 · J.J. Ojha, J.G. Simmons, et al. · IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS) · 2

Beam steering in 980 nm high power laser diodes

2002 · J. Guthrie, G.L. Tan, et al. · IEEE Lasers and Electro-Optics Society Annual Meeting (LEOS) · 2

Observation of optical radiation in the negative differential resistance region of optoelectronic triangular barrier switch

1988 · Ranjit S. Mand, Masaru Nakamura · Journal of Applied Physics · 2

Summary Abstract: Double heterostructure optoelectronic switching devices using molecular beam epitaxy

1986 · G. W. Taylor, J. G. Simmons, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 2

Optoelectronic integration of a GaAs/AlGaAs bistable field effect transistor (BISFET) and LED

1994 · J.J. Ojha, J.G. Simmons, et al. · IEEE Electron Device Letters · 1

Optical bistability in the GaAs/AlGaAs bistable field effect transistor

1992 · Jugnu J. Ojha, Anthony S. Vetter, et al. · Canadian Journal of Physics · 1

Demonstration of high performance heterojunction field effect transistor in InAlAs/InGaAs/InAlGaAs/InP material system

1991 · R.S. Mand, J.G. Simmons · Electronics Letters · 1

IIIA-2 a new double heterostructure opto-electronic switch—DOES

1985 · G.W. Taylor, R.S. Mand, et al. · IEEE Transactions on Electron Devices · 1

Insight into criteria for design optimisation ofbistable field effect transistor (BISFET)

1994 · J.J. Ojha, J.G. Simmons, et al. · Electronics Letters

Demonstration of novel quantum well gate controlled photodetector switch

1992 · J.M. Xu, R.S. Mand, et al. · Electronics Letters

Works count: 28

Citation count: 415

H-index: 10

I10-index: 10