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A. Bachrouri
Observed name:
A Bachrouri
Institution:
Universitat de Barcelona
Observed institution:
Universitat de Barcelona
OpenAlex ID:
A5014318944
Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen
2001
·
A Misiuk
, J Bak-Misiuk
, et al.
·
Computational Materials Science
·
16
Density of states in the channel material of low temperature polycrystalline silicon thin film transistors
2000
·
K Mourgues
, A Rahal
, et al.
·
Journal of Non-Crystalline Solids
·
12
Defects and their Electronic Properties in High-Pressure-Annealed SOI Structures Sliced by Hydrogen
2002
·
V. P. Popov
, A. K. Gutakovskii
, et al.
·
Springer eBooks
·
8
Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure
2001
·
J. Bak-Misiuk
, I.V. Antonova
, et al.
·
Journal of Alloys and Compounds
·
7
TEM characterisation of high pressure–high-temperature-treated Czochralski silicon samples
2000
·
A Romano-Rodrı́guez
, A Bachrouri
, et al.
·
Materials Science and Engineering B
·
4
Influence of Thermal Treatments on the Crystallisation of LPCVD-Deposited Si Thin Films
2001
·
A. Bachrouri
, A. Romano-Rodríguez
, et al.
·
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena
Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si
2000
·
A. Misiuk
, H.B. Surma
, et al.
·
physica status solidi (a)
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Works count:
7
Citation count:
47
H-index:
4
I10-index:
2
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