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Masakazu Kuwabara

Observed name: M. Kuwabara
Observed institution: Hamamatsu Photonics (Japan)
OpenAlex ID: A5014386860
Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode
2008 · Harumasa Yoshida, Yoji Yamashita, et al. · Applied Physics Letters · 238
A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode
2008 · Harumasa Yoshida, Yoji Yamashita, et al. · Nature Photonics · 228
AlGaN-based laser diodes for the short-wavelength ultraviolet region
2009 · Harumasa Yoshida, Masakazu Kuwabara, et al. · New Journal of Physics · 69
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Entirely Crack-Free Ultraviolet GaN/AlGaN Laser Diodes Grown on 2-in. Sapphire Substrate
2007 · Harumasa Yoshida, Yasufumi Takagi, et al. · Japanese Journal of Applied Physics · 68
A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN
2015 · Yuta Aoki, Masakazu Kuwabara, et al. · Applied Physics Letters · 61
Novel UV devices on high-quality AlGaN using grooved underlying layer
2009 · Hirotoshi Tsuzuki, Fumiaki Mori, et al. · Journal of Crystal Growth · 58
Radiative and nonradiative recombination in an ultraviolet GaN/AlGaN multiple-quantum-well laser diode
2010 · Harumasa Yoshida, Masakazu Kuwabara, et al. · Applied Physics Letters · 57
High‐performance UV emitter grown on high‐crystalline‐quality AlGaN underlying layer
2009 · Hirotoshi Tsuzuki, Fumiaki Mori, et al. · physica status solidi (a) · 57
Over 1 W record-peak-power operation of a 338 nm AlGaN multiple-quantum-well laser diode on a GaN substrate
2016 · Hiroyuki Taketomi, Yuta Aoki, et al. · Japanese Journal of Applied Physics · 49
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The current status of ultraviolet laser diodes
2011 · Harumasa Yoshida, Masakazu Kuwabara, et al. · physica status solidi (a) · 36
A 340-nm-band ultraviolet laser diode composed of GaN well layers
2013 · Yoji Yamashita, Masakazu Kuwabara, et al. · Optics Express · 27
Injection efficiency in AlGaN‐based UV laser diodes
2011 · Kengo Nagata, Kenichiro Takeda, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 22
Reduction in threshold current density of 355 nm UV laser diodes
2011 · Kengo Nagata, Kenichiro Takeda, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 16
Fabrication and characterization of short period AlN/GaN quantum cascade laser structures
2004 · Y. Inoue, H. Nagasawa, et al. · Journal of Crystal Growth · 16
Time-Resolved 1.5 µm-Band Photoluminescence of Highly Oriented β-FeSi2Films Prepared by Magnetron-Sputtering Deposition
2004 · Shucheng Chu, Toru Hirohada, et al. · Japanese Journal of Applied Physics · 16
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Nitride-based stacked laser diodes with a tunnel junction
2017 · Satoru Okawara, Yuta Aoki, et al. · Applied Physics Express · 15
Laser Operation of Nitride Laser Diodes with GaN Well Layer in 340 nm Band
2013 · Masakazu Kuwabara, Yoji Yamashita, et al. · Japanese Journal of Applied Physics · 10
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AlN/GaN Near-Infrared Quantum-Cascade Structures with Resonant-Tunneling Injectors Utilizing Polarization Fields
2002 · Akihiro Ishida, Yoku Inoue, et al. · Japanese Journal of Applied Physics · 8
Internal quantum efficiency and internal loss of ultraviolet laser diodes on the low dislocation density AlGaN underlying layer
2010 · Kenichiro Takeda, Kengo Nagata, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 4
Reduction in operating voltage of UV laser diode
2010 · Tomoki Ichikawa, Kenichiro Takeda, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1
Compositional Optimization of PbCaSSe in PbCaSSe/PbS/PbCaSSe DH structure
2010 · Seishi Abe, Masakazu Kuwabara, et al. · Physics Procedia · 1
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Recent progress in ultraviolet AlGaN laser diodes
2016 · Harumasa Yoshida, Taketomi Hiroyuki, et al. · IEICE Technical Report; IEICE Tech. Rep.
Current status and future prospect of ultraviolet laser diodes
2014 · Harumasa Yoshida, Yuta Aoki, et al. · IEICE Technical Report; IEICE Tech. Rep.
Laser Operation of Nitride Laser Diodes with GaN Well Layer in 340 nm Band (Special Issue : Recent Advances in Nitride Semiconductors)
2013 · Masakazu Kuwabara, Yoji Yamashita, et al. · Japanese Journal of Applied Physics
Recent developments in AlGaN-based laser diodes for short ultraviolet region
2011 · Harumasa Yoshida, Masakazu Kuwabara, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
Works count: 27
Citation count: 1,057
H-index: 15
I10-index: 17
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