Author

Dariush Madadi

Institution: Semnan University

Observed institution: Semnan University

ORCID: 0000-0002-4579-0283

Observed ORCID: 0000-0002-4579-0283

OpenAlex ID: A5015460768

Investigation of Short Channel Effects in SOI MOSFET with 20 nm Channel Length by a β-Ga2O3 Layer

2020 · Dariush Madadi, Ali A. Orouji · ECS Journal of Solid State Science and Technology · 36

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Scattering mechanisms in β-Ga2O3 junctionless SOI MOSFET: Investigation of electron mobility and short channel effects

2021 · Dariush Madadi, Ali A. Orouji · Materials Today Communications · 33

Investigation of tied double gate 4H–SiC junctionless FET in 7 nm channel length with a symmetrical dual p+ layer

2020 · Dariush Madadi, Ali A. Orouji · Physica E Low-dimensional Systems and Nanostructures · 29

New high-voltage and high-speed β-Ga2O3 MESFET with amended electric field distribution by an insulator layer

2020 · Dariush Madadi, Ali A. Orouji · The European Physical Journal Plus · 28

Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study

2023 · Dariush Madadi, Saeed Mohammadi · Discover Nano · 26

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β-Ga2O3 double gate junctionless FET with an efficient volume depletion region

2021 · Dariush Madadi, Ali A. Orouji · Physics Letters A · 26

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A β-Ga₂O₃ MESFET to Amend the Carrier Distribution by Using a Tunnel Diode

2020 · Dariush Madadi, Ali Asghar Orouji · IEEE Transactions on Device and Materials Reliability · 22

High-performance α-FAPbI3 perovskite solar cells with an optimized interface energy band alignment by a Zn(O,S) electron transport layer

2023 · Dariush Madadi, Iman Gharibshahian, et al. · Journal of Materials Science Materials in Electronics · 21

Investigation of 4H-SiC gate-all-around cylindrical nanowire junctionless MOSFET including negative capacitance and quantum confinements

2021 · Dariush Madadi, Ali Asghar Orouji · The European Physical Journal Plus · 20

Physical analysis of β-Ga2O3 gate-all-around nanowire junctionless transistors: short-channel effects and temperature dependence

2022 · Aida Motamedi, Ali A. Orouji, et al. · Journal of Computational Electronics · 18

Improvement of Nanoscale SOI MOSFET Heating Effects by Vertical Gaussian Drain-Source Doping Region

2020 · Dariush Madadi, Ali A. Orouji, et al. · Silicon · 18

Achieving beyond 26.6% efficiency for graded bandgap perovskite solar cell: Theoretical study

2023 · Dariush Madadi · Materials Chemistry and Physics · 17

β-Ga2O3 Junctionless FET with an Ω Shape 4H-SiC Region in Accumulation Mode

2021 · Dariush Madadi · Silicon · 17

Investigation of Junctionless Fin-FET Characterization in Deep Cryogenic Temperature: DC and RF analysis

2022 · Dariush Madadi · IEEE Access · 15

Realization of Double‐Gate Junctionless Field Effect Transistor Depletion Region for 6 nm Regime with an Efficient Layer

2022 · Mohammad Bolokian, Ali A. Orouji, et al. · physica status solidi (a) · 11

Junction-less SOI FET with an Embedded p+ Layer: Investigation of DC, RF, and Negative Capacitance Characteristics

2023 · Dariush Madadi, Saeed Mohammadi · Silicon · 10

An embedded β-Ga2O3 layer in a SOI-LDMOS to improve breakdown voltage

2022 · Farshad Gholipour, Ali A. Orouji, et al. · Journal of Computational Electronics · 7

Stacked Single‐Gate Silicon on Insulator 4H‐SiC Junctionless Field‐Effect Transistor with a Buried P‐Type 4H‐SiC Layer

2022 · Dariush Madadi, Ali A. Orouji · physica status solidi (a) · 6

Improvement of a Novel SOI- MESFET with an Embedded GaN Layer for High-Frequency Operations

2021 · Mehdi Khoorabeh, Ali A. Orouji, et al. · Silicon · 6

Performance improvement of junctionless SOI-MOSFETs by a superior depletion technique

2023 · Kimia M Abrishami, Ali A Orouji, et al. · Physica Scripta · 5

500 V breakdown voltage in β ‐Ga 2 O 3 laterally diffused metal‐oxide‐semiconductor field‐effect transistor with 108 MW/cm 2 power figure of merit

2023 · Nesa Abedi Rik, Ali. A. Orouji, et al. · IET Circuits Devices & Systems · 5

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Novel SOI-MESFET for High-Frequency Operations: Improving Electric Field Distribution

2024 · Vahid Shojaei Nezhad, Abdollah Abbasi, et al. · Brazilian Journal of Physics · 4

A New Technique for Improving Kink Effect in High-Voltage LDMOS Transistors: M-shape Drift Region

2021 · Farshad Gholipour, Ali A. Orouji, et al. · Silicon · 3

A Modulation Electric Field Technique to Improve the LD-MOSFET Performance with a P-type Ga2O3 Pocket

2023 · Seyed Mohammad Hosein Jafari, Ali A. Orouji, et al. · Silicon · 2

Hysteresis impact of ferroelectric oxide on double-source vertical tunnel FET: DC and RF performance

2024 · Dariush Madadi · The European Physical Journal Plus · 1

Works count: 27

Citation count: 386

H-index: 14

I10-index: 16